Model based configuration parameter management

• US 9,916,237 B2
• Filed: 02/02/2015
• Issued: 03/13/2018
• Est. Priority Date: 12/12/2014
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Inventors: Hyun, Jea Woong, Perschon, Joshua, Lucky, Rick, Sun, Hairong, Peterson, James
• Primary Examiner(s): Rigol, Yaima
• Application Number:
  US14/612,282
• Publication Number:
  US 20160170871A1
• Time in Patent Office: 1,135 Days
• Field of Search: None
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/7201 Logical to physical mapping or translation of blocks or pages
• CPC Class Codes: G06F 2212/7202 Allocation control and policies
• CPC Class Codes: G06F 2212/7206 Reconfiguration of flash memory system
• CPC Class Codes: G06F 3/06 Digital input from, or digital output to, record carriers , e.g. RAID, emulated record carriers or networked record carriers
• CPC Class Codes: G06F 3/0631 by allocating resources to storage systems
• CPC Class Codes: G06F 3/0653 Monitoring storage devices or systems
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

Abstract

Apparatuses, systems, methods, and computer program products are disclosed for model based configuration parameter management. An association module is configured to group a plurality of erase blocks of a non-volatile memory medium based on an amount of time since data has been written to the plurality of erase blocks. A read module is configured to sample data of at least two word lines from at least one erase block from each of a plurality of groups of erase blocks. A configuration parameter module is configured to determine different read voltage thresholds for different word lines of groups of erase blocks using different read voltage threshold models for different groups based on sampled data.

Claims

1. A method comprising:

performing read operations for at least two different word lines of a storage region of a non-volatile storage device in response to a trigger;

determining different values for a configuration parameter for the at least two different word lines based on the read operations; and

setting, on the non-volatile storage device, different values for the configuration parameter for other word lines of the storage region based on a linear behavior model between the different values for the configuration parameter determined for the at least two different word lines, by storing a slope of the linear behavior model for the storage region of the non-volatile storage device and multiplying the slope by identifiers for the other word lines to set the different values for the configuration parameter for the other word lines.

2. The method of claim 1, further comprising using values for the configuration parameter based on the behavior model for a group of one or more additional storage regions.

3. The method of claim 2, wherein the one or more additional storage regions are selected for the group based on an amount of time since data was written to the one or more additional storage regions.

4. The method of claim 1, wherein the behavior model comprises a linear model comprising the slope and an intercept determined based on the values for the configuration parameter determined for the at least two different word lines.

5. The method of claim 4, wherein the slope comprises a negative slope such that values for the behavior model decrease as word line positions for the storage region increase.

6. The method of claim 1, further comprising determining different behavior models for different groups of storage regions grouped based on an amount of time since data was written to the storage regions of the different groups, read operations being performed for one or more storage regions from each of the different groups.

7. The method of claim 1, wherein the trigger comprises an age threshold being satisfied.

8. The method of claim 7, further comprising performing wear leveling for storage regions of the non-volatile storage device such that program/erase cycle counts for the storage regions are within a predefined range, the age threshold comprising a program/erase cycle count threshold.

9. The method of claim 1, wherein the at least two different word lines comprise word lines and the storage region comprises an erase block of a non-volatile storage medium.

10. The method of claim 9, wherein the word lines are selected to be separated from ends of the erase block by at least one word line.

11. The method of claim 9, wherein the behavior model is determined based on read operations for at least two word lines from multiple different erase blocks of a die of the non-volatile storage medium and the behavior model is used for the configuration parameter for the entire die of the non-volatile storage medium.

12. The method of claim 1, wherein the configuration parameter comprises one or more read voltage thresholds for storage cells of the non-volatile storage device.

13. An apparatus comprising:

an association module configured to group a plurality of erase blocks of a non-volatile memory medium based on an amount of time since data has been written to the plurality of erase blocks;

a read module configured to sample data of at least two different word lines from at least one erase block from each group of erase blocks; and

a configuration parameter module configured to set different read voltage thresholds for different word lines of the groups of erase blocks using different linear read voltage threshold models for different groups of the groups of erase blocks based on the sampled data of the at least two different word lines from the at least one erase block from each group of erase blocks, by storing a slope for the different linear read voltage threshold models for each different group of the groups of erase blocks and multiplying the stored slope for a group of the different groups by a position for a word line from the group to set the different read voltage thresholds for the different word lines of the groups,

wherein at least a portion of the association module, the read module, and the configuration module comprise one or more of logic hardware and a non-transitory computer readable storage medium storing executable code.

14. The apparatus of claim 13, further comprising a model module configured to determine the different read voltage threshold models for the different groups of erase blocks by interpolating read voltage thresholds for other word lines from the at least one sampled erase block from each group based on the sampled data from the at least two word lines from each group of erase blocks.

15. The apparatus of claim 14, further comprising a trigger module configured to determine that a trigger event has occurred, the read module configured to resample data from at least one erase block from each group of erase blocks and the model module configured to determine updated read voltage threshold models based on the resampled data, each in response to the trigger event.

16. The apparatus of claim 13, further comprising a trigger module configured to determine that a trigger event has occurred, the association module configured to regroup the plurality of erase blocks in response to the trigger event, the regrouping based on updated amounts of time since data has been written to the plurality of erase blocks.

17. The apparatus of claim 13, wherein the read module is configured to sample the data by rereading the data multiple times using different read voltage thresholds.

18. A system comprising:

a plurality of storage elements each comprising a plurality of storage regions; and

a controller for the storage elements, the controller configured to;

perform read operations for at least two different word lines of a storage region of the plurality of storage regions in response to a trigger;

determine different values for a configuration parameter for the at least two different word lines based on the read operations; and

set, on the storage elements, different values for the configuration parameter for other word lines of the storage region based on a linear behavior model between the different values for the configuration parameter determined for the at least two different word lines, by storing a slope for the linear behavior model for the storage region and multiplying the slope by an address for the other word lines to set the different values for the configuration parameter for the other word lines.

19. The system of claim 18, wherein at least a portion of the other word lines are disposed between the at least two different word lines for which the read operations were performed to determine the values for the configuration parameter.

20. The system of claim 18, wherein the controller comprises one or more of a hardware controller of a non-volatile storage device comprising the plurality of storage elements and a device driver for the non-volatile storage device comprising the plurality of storage elements, the device driver comprising computer executable code stored on a computer readable storage medium.