Predicting data correlation using multivalued logical outputs in static random access memory (SRAM) storage cells
First Claim
1. A method of predicting data correlation using multivalued logical outputs in modified static random access memory (SRAM) storage cells comprising:
- generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points of each variable set;
writing, into modified SRAM storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and
for each group of corresponding logical outputs of the plurality of logical outputs;
activating a fight port for the modified SRAM storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each modified SRAM storage cell; and
measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.
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Abstract
Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.
38 Citations
20 Claims
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1. A method of predicting data correlation using multivalued logical outputs in modified static random access memory (SRAM) storage cells comprising:
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generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points of each variable set; writing, into modified SRAM storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs; activating a fight port for the modified SRAM storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each modified SRAM storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An apparatus for predicting data correlation using multivalued logical outputs in modified static random access memory (SRAM) storage cells, the apparatus configured to carry out the steps of:
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generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points of each variable set; writing, into modified SRAM storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs; activating a fight port for the modified SRAM storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each modified SRAM storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A computer program product for predicting data correlation using multivalued logical outputs in modified static random access memory (SRAM) storage cells, the computer program product disposed upon a non-transitory computer readable medium, the computer program product comprising computer program instructions that, when executed, cause a computer to carry out the steps of:
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generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points of each variable set; writing, into modified SRAM storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs; activating a fight port for the modified SRAM storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each modified SRAM storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification