Semiconductor device
First Claim
1. A semiconductor device comprising:
- a transistor over a substrate, the transistor comprising;
a gate electrode over the substrate;
a gate insulating film in contact with the gate electrode; and
an oxide semiconductor film in contact with the gate insulating film;
a pixel portion over the substrate;
a first light-transmitting conductive film over the substrate in the pixel portion;
an oxide insulating film over the oxide semiconductor film and the first light-transmitting conductive film;
a second light-transmitting conductive film over the first light-transmitting conductive film in the pixel portion, the second light-transmitting conductive film electrically connected to the transistor and having a depressed portion in the pixel portion; and
an organic resin film over the second light-transmitting conductive film to fill the depressed portion,wherein each of the first light-transmitting conductive film and the oxide semiconductor film comprises In, Ga, Zn and O.
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Accused Products
Abstract
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a transistor over a substrate, the transistor comprising; a gate electrode over the substrate; a gate insulating film in contact with the gate electrode; and an oxide semiconductor film in contact with the gate insulating film; a pixel portion over the substrate; a first light-transmitting conductive film over the substrate in the pixel portion; an oxide insulating film over the oxide semiconductor film and the first light-transmitting conductive film; a second light-transmitting conductive film over the first light-transmitting conductive film in the pixel portion, the second light-transmitting conductive film electrically connected to the transistor and having a depressed portion in the pixel portion; and an organic resin film over the second light-transmitting conductive film to fill the depressed portion, wherein each of the first light-transmitting conductive film and the oxide semiconductor film comprises In, Ga, Zn and O. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a transistor over a substrate, the transistor comprising; a gate electrode over the substrate; a gate insulating film in contact with the gate electrode; and an oxide semiconductor film in contact with the gate insulating film; a pixel portion over the substrate; a first light-transmitting conductive film over the substrate in the pixel portion; an oxide insulating film over the oxide semiconductor film and the first light-transmitting conductive film; a second light-transmitting conductive film over the first light-transmitting conductive film in the pixel portion, the second light-transmitting conductive film electrically connected to the transistor and having a depressed portion in the pixel portion; and an organic resin film over the second light-transmitting conductive film to fill the depressed portion, wherein an atomic ratio of a main composition of the first light-transmitting conductive film is the same as an atomic ratio of a main composition of the oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification