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Semiconductor device

  • US 9,917,116 B2
  • Filed: 05/22/2017
  • Issued: 03/13/2018
  • Est. Priority Date: 01/30/2013
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a transistor over a substrate, the transistor comprising;

    a gate electrode over the substrate;

    a gate insulating film in contact with the gate electrode; and

    an oxide semiconductor film in contact with the gate insulating film;

    a pixel portion over the substrate;

    a first light-transmitting conductive film over the substrate in the pixel portion;

    an oxide insulating film over the oxide semiconductor film and the first light-transmitting conductive film;

    a second light-transmitting conductive film over the first light-transmitting conductive film in the pixel portion, the second light-transmitting conductive film electrically connected to the transistor and having a depressed portion in the pixel portion; and

    an organic resin film over the second light-transmitting conductive film to fill the depressed portion,wherein each of the first light-transmitting conductive film and the oxide semiconductor film comprises In, Ga, Zn and O.

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