Semiconductor device having a polycrystalline silicon IGFET
First Claim
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1. A semiconductor device comprising:
- a semiconductor body, having a first surface,a gate electrode structure, which comprises polycrystalline silicon, of an IGFET in a first trench extending from above the first surface into the semiconductor body, anda semiconductor element, which is different from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from above the first surface into the semiconductor body, wherein the semiconductor element comprises a zap structure or an edge termination structure of the IGFET,wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.
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Abstract
A semiconductor device includes a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.
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11 Claims
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1. A semiconductor device comprising:
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a semiconductor body, having a first surface, a gate electrode structure, which comprises polycrystalline silicon, of an IGFET in a first trench extending from above the first surface into the semiconductor body, and a semiconductor element, which is different from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from above the first surface into the semiconductor body, wherein the semiconductor element comprises a zap structure or an edge termination structure of the IGFET, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification