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Devices including gate spacer with gap or void and methods of forming the same

  • US 9,917,178 B2
  • Filed: 01/30/2017
  • Issued: 03/13/2018
  • Est. Priority Date: 06/15/2015
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a first inter-layer dielectric layer over a substrate;

    forming a gate stack in the first inter-layer dielectric layer and over the substrate;

    forming a contact through the first inter-layer dielectric layer to the substrate; and

    forming a gate spacer between the gate stack and the contact, the gate spacer being around the gate stack and having a void around the gate stack.

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