Bulk acoustic resonator comprising aluminum scandium nitride
First Claim
1. A bulk acoustic wave (BAW) resonator structure, comprising:
- a first electrode disposed over a substrate;
an air cavity located in the substrate and below the first electrode;
a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 μ
m to approximately 1.5 μ
m; and
a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for comprising an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance.
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Accused Products
Abstract
A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.
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Citations
17 Claims
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1. A bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 μ
m to approximately 1.5 μ
m; anda second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for comprising an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance. - View Dependent Claims (2, 3, 4)
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5. A bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, wherein the BAW resonator structure has a passband with a center frequency between approximately 700 MHz and approximately 900 MHz; and a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for comprising an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance. - View Dependent Claims (6, 7, 8, 9)
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10. A ladder filter comprising a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port, at least one of the series resonators, or shunt resonators comprising a bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance. - View Dependent Claims (11, 12)
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13. A ladder filter comprising a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port, at least one of the series resonators, or shunt resonators comprising a bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer, wherein the ladder filter has a passband with a center frequency in a range of approximately 700 MHz to approximately 900 MHz. - View Dependent Claims (14, 15, 16, 17)
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Specification