Method of performing model-based scanner tuning

• US 9,921,485 B2
• Filed: 10/09/2015
• Issued: 03/20/2018
• Est. Priority Date: 08/22/2007
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ye, Jun, Cao, Yu
• Primary Examiner(s): Whitesell Gordon, Steven H
• Application Number:
  US14/880,018
• Publication Number:
  US 20160033872A1
• Time in Patent Office: 893 Days
• Field of Search: None
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70458 Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70516 Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

Abstract

A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Claims

1. A method of improving lithography system imaging performance, the method comprising:

obtaining reference values of, or for, a reference lithography system, the reference values at least in part defining a desired imaging condition of a target pattern;

performing, by a hardware computer system, an imaging simulation using a model of another lithography system and the reference values to arrive at imaging results; and

based at least on the imaging results and measured results from a substrate exposed using the other lithography system, varying, by the computer system, parameters of the other lithography system such that values of the varied parameters of the other lithography system enable the other lithography system to realize, as a best match or within a predefined error criteria, the desired imaging condition of the target pattern.

2. The method of claim 1, further comprising obtaining the measurement results for the other lithography system when set using the reference values.

3. The method of claim 1, wherein the obtaining the reference values further comprises performing, by the computer system, a simulation to arrive at the reference values that at least in part define a desired imaging condition of a target pattern.

4. The method of claim 1, wherein at least one of the reference values comprises a spatial illumination parameter value.

5. The method of claim 1, wherein the varying comprises matching optical proximity effects between the reference lithography system and the other lithography system.

6. The method of claim 1, wherein the reference values correspond to an imaging model.

7. The method of claim 1, wherein the model of the other lithography system comprises a resist parameter.

8. The method of claim 1, further comprising performing, by the computer system, an imaging simulation using a model of a third lithography system and the reference values to arrive at imaging results for the third lithography system;

and, based at least on the imaging results for the third lithography system, varying, by the computer system, parameters of the third lithography system that correspond to the reference values such that values of the varied parameters of the third lithography system at least in part define, as a best match or within a predefined error criteria, the desired imaging condition of the target pattern.

9. The method of claim 1, wherein the reference lithography system comprises a physical lithography system.

10. The method of claim 1, wherein the reference lithography system comprises a model.

11. A method of improving lithography system imaging performance, the method comprising:

obtaining reference values that at least in part define a desired imaging condition of a target pattern;

obtaining measurement results from a substrate exposed using a first lithography system that is set using the reference values;

performing, by a hardware computer system, an imaging simulation using a model of the first lithography system and the reference values to arrive at imaging results; and

based at least on the imaging results and the measurement results, varying, by the computer system, parameters of the first lithography system that correspond to the reference values such that values of the varied parameters of the first lithography system at least in part define, as a best match or within a predefined error criteria, the desired imaging condition of the target pattern.

12. The method of claim 11, wherein the obtaining the reference values further comprises performing, by the computer system, a simulation to arrive at the reference values that at least in part define a desired imaging condition of a target pattern.

13. The method of claim 11, wherein at least one of the reference values comprises a spatial illumination parameter value.

14. The method of claim 11, wherein the varying comprises matching optical proximity effects between a reference lithography system associated with the reference values and the first lithography system.

15. The method of claim 11, wherein the reference values correspond to an imaging model.

16. The method of claim 11, wherein the model of the first lithography system comprises a resist parameter.

17. The method of claim 11, further comprising performing, by the computer system, an imaging simulation using a model of a further lithography system and the reference values to arrive at imaging results for the further lithography system;

and, based at least on the imaging results for the further lithography system, varying, by the computer system, parameters of the further lithography system that correspond to the reference values such that values of the varied parameters of the further lithography system at least in part define, as a best match or within a predefined error criteria, the desired imaging condition of the target pattern.

18. The method of claim 11, wherein the reference values correspond to another physical lithography system.

19. The method of claim 11, wherein the reference values are those of a model.

20. A method of improving lithography system imaging performance, the method comprising:

obtaining a first set of imaging results of a reference lithography system;

performing, by a hardware computer system, an imaging simulation using a model of another lithography system to arrive at a second set of imaging results; and

based at least on the first and second sets of imaging results and measured results from a substrate exposed using the other lithography system, varying, by the computer system, parameters of the other lithography system to enable the other lithography system to realize, as a best match or within a predefined error criteria, a desired imaging condition of a target pattern.

21. The method of claim 20, wherein the model of the other lithography system comprises a resist parameter.

22. The method of claim 20, wherein the reference lithography system comprises a physical lithography system.

23. The method of claim 20, wherein the reference lithography system comprises a model.