Sample processing method and charged particle beam device
First Claim
1. A sample processing method of processing a sample including at least two phases, at least one of the at least two phases including a structure serving as an observation target, the sample processing method comprising:
- a step of performing, by using an ion beam, ion milling on a phase on a back surface of the sample facing a front surface of the sample serving as an electron beam irradiation surface of the sample, the phase being different from the phase including the structure serving as the observation target; and
a step of determining a processing end point on the back surface of the sample on the basis of a strength of an interference image of an electron diffraction wave generated from the back surface of the sample by, after performing ion milling on the back surface of the sample, irradiating the front surface of the sample with an electron beam and transmitting the electron beam through the sample;
wherein at least two or more parameters of a peak height, a signal/noise ratio, and a half-value width of a line profile of the strength of the interference image of the electron diffraction wave emitted from the back surface of the sample are selected, and the processing end point on the back surface of the sample is determined on the basis of a change in the selected parameters.
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Accused Products
Abstract
The present invention provides, in the preparation of a TEM or STEM sample using FIB-SEM, a technique for obtaining a processing end point on the back surface side of the sample. The state of the sample back surface being processed by the FIB is detected using a Kikuchi pattern formed when electrons that have been injected by the SEM are emitted from the sample back surface. Since this Kikuchi pattern is caused by the crystal structure of the sample back surface, the crystal orientation relative to the injected electron beam, and the crystal lattice constants, detecting the pattern allows the processing end point on the back surface side to be obtained during the FIB processing.
12 Citations
13 Claims
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1. A sample processing method of processing a sample including at least two phases, at least one of the at least two phases including a structure serving as an observation target, the sample processing method comprising:
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a step of performing, by using an ion beam, ion milling on a phase on a back surface of the sample facing a front surface of the sample serving as an electron beam irradiation surface of the sample, the phase being different from the phase including the structure serving as the observation target; and a step of determining a processing end point on the back surface of the sample on the basis of a strength of an interference image of an electron diffraction wave generated from the back surface of the sample by, after performing ion milling on the back surface of the sample, irradiating the front surface of the sample with an electron beam and transmitting the electron beam through the sample; wherein at least two or more parameters of a peak height, a signal/noise ratio, and a half-value width of a line profile of the strength of the interference image of the electron diffraction wave emitted from the back surface of the sample are selected, and the processing end point on the back surface of the sample is determined on the basis of a change in the selected parameters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A charged particle beam device for processing a sample including at least two phases, at least one of the at least two phases including a structure serving as an observation target, the charged particle beam device comprising:
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a SEM housing configured to scan the sample with an electron beam, the SEM housing including an electron source, an electron acceleration unit, an electron focusing lens, and an electron beam scanning mechanism; a FIB housing configured to irradiate, with an ion beam, a back surface of the sample facing a front surface of the sample serving as an electron beam irradiation surface of the sample and perform ion milling on a phase different from the phase including the structure, the FIB housing including an ion source, an ion acceleration unit, an ion focusing lens, and an ion beam scanning mechanism; a transmission back-scattered electron diffraction wave detector configured to detect an electron diffraction wave generated from the back surface of the sample by transmitting the electron beam through the sample, the transmission back-scattered electron diffraction wave detector being placed below the back surface of the sample; and a computer configured to generate an interference image of the electron diffraction wave on the basis of the electron diffraction wave detected by the transmission back-scattered electron diffraction wave detector, wherein the computer determines a processing end point on the back surface of the sample on the basis of a strength of the interference image of the electron diffraction wave, and at least two or more parameters of a peak height, a signal/noise ratio, and a half-value width of a line profile of the strength of the interference image of the electron diffraction wave emitted from the back surface of the sample are selected, and the processing end point on the back surface of the sample is determined on the basis of a change in the selected parameters. - View Dependent Claims (11, 12, 13)
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Specification