Integrated circuit device and method of manufacturing the same
First Claim
1. An integrated circuit (IC) device comprising:
- a substrate including a fin-type active region formed in the substrate,the fin-type active region protruding from the substrate and extending in a first direction parallel to a main surface of the substrate,the fin-type active region including a channel region having a first conductivity type,the fin-type active region including a stepped portion on at least one sidewall thereof;
a step insulation layer on the at least one sidewall of the fin-type active region,the step insulation layer contacting the stepped portion of the fin-type active region; and
a first high-level isolation layer on the at least one sidewall of the fin-type active region with the step insulation layer between the first high-level isolation layer and the at least one sidewall of the fin-type active region,the first high-level isolation layer extending in a second direction that is different from the first direction.
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Accused Products
Abstract
An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.
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Citations
20 Claims
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1. An integrated circuit (IC) device comprising:
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a substrate including a fin-type active region formed in the substrate, the fin-type active region protruding from the substrate and extending in a first direction parallel to a main surface of the substrate, the fin-type active region including a channel region having a first conductivity type, the fin-type active region including a stepped portion on at least one sidewall thereof; a step insulation layer on the at least one sidewall of the fin-type active region, the step insulation layer contacting the stepped portion of the fin-type active region; and a first high-level isolation layer on the at least one sidewall of the fin-type active region with the step insulation layer between the first high-level isolation layer and the at least one sidewall of the fin-type active region, the first high-level isolation layer extending in a second direction that is different from the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An IC device comprising:
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a substrate including one pair of first fin-type active regions and one pair of second fin-type active regions, the first fin-type active regions having a first-conductivity-type channel region, the first fin-type active regions being formed in a straight line in a first region of the substrate, the second fin-type active regions having a second-conductivity-type channel region, the second fin-type active regions being formed in a straight line in a second region of the substrate, at least one first fin-type active region of the one pair of first fin-type active regions including a stepped portion on one sidewall thereof; a first high-level isolation layer on the substrate between the one pair of first fin-type active regions; a step insulation layer on the substrate between the at least one first fin-type active region and the first high-level isolation layer, the step insulation layer contacting the stepped portion; and a second high-level isolation layer on the substrate between the one pair of second fin-type active regions. - View Dependent Claims (13, 14, 15)
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16. An integrated circuit (IC) device comprising:
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a substrate including a plurality of first fin-type active regions formed in the substrate, the first fin-type active regions being defined by first and second trenches formed in the substrate, the first trenches and second trenches extending in first and second directions, respectively, that cross each other, the first fin-type active regions being elongated in the first direction, the first fin-type active regions each including a pair of first sidewalls opposite each other in the first direction and a pair of second sidewalls opposite each other in the second direction, at least one of the second sidewalls including a stepped portion, the first fin-type active regions each including a lower portion below the stepped portion and an upper portion that protrudes above the stepped portion; a first high-level isolation layer in the second trenches; and a step insulation layer on the stepped portion, the step insulation layer between the first high-level isolation layer and the upper portions of the first fin-type active regions. - View Dependent Claims (17, 18, 19, 20)
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Specification