Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

• US 9,922,987 B1
• Filed: 03/24/2017
• Issued: 03/20/2018
• Est. Priority Date: 03/24/2017
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Inventors: Mizutani, Yuki, Kai, James, Toyama, Fumiaki, Fujino, Shigehiro, Alsmeier, Johann
• Primary Examiner(s): Fourson, III, George
• Application Number:
  US15/468,732
• Time in Patent Office: 361 Days
• Field of Search: 257265, 257331, 438212
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H10B 41/10 characterised by the top-view layout
• CPC Class Codes: H10B 41/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 41/50 characterised by the boundary region between the core region and the peripheral circuit region
• CPC Class Codes: H10B 43/10 characterised by the top-view layout
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/35 with cell select transistors, e.g. NAND
• CPC Class Codes: H10B 43/50 characterised by the boundary region between the core and peripheral circuit regions

Abstract

Memory stack structures can be formed through an alternating stack of insulating layers and spacer material layers that are formed as, or are subsequently replaced with, electrically conductive layers. The memory stack structures can be formed as rows having a first pitch. Additional insulating layers and at least one drain select level dielectric layer are formed over the alternating stack. Drain select level openings are formed in rows having a smaller second pitch. Partial replacement of the at least one drain select level dielectric layer forms spaced apart electrically conductive line structures that surround a respective plurality of drain select level openings. Drain select level channel portions are subsequently formed in respective drain select level openings.

Claims

1. A three-dimensional memory device comprising:

an alternating stack of insulating layers and electrically conductive layers located over a substrate;

at least one drain select level conductive layer located over the alternating stack, wherein each of the at least one drain select level conductive layer comprises electrically conductive line structures that laterally extend along a first horizontal direction and are laterally spaced apart among one another along a second horizontal direction;

memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a memory level channel portion contacting an inner sidewall of the memory film; and

drain select level channel portions vertically extending through the at least one drain select level conductive layer, contacting a respective memory level channel portion, and laterally surrounded by a respective drain select level gate dielectric and a respective one of the electrically conductive line structures at each level of the at least one drain select level conductive layer;

wherein;

the memory stack structures are arranged in rows that extend along the first horizontal direction with a first row-to-row pitch along the second horizontal direction across an area including two or more electrically conductive line structures of a same drain select level;

for each electrically conductive line structure, a respective array of drain select level channel portions extends through the electrically conductive line structure, and drain select level channel portions within the respective array are arranged in at least four rows that extend along the first horizontal direction with a second row-to-row pitch along the second horizontal direction; and

the second row-to-row pitch is less than the first row-to-row pitch.

2. The three-dimensional memory device of claim 1, wherein:

the drain select level channel portions within the respective array are arranged in four rows through each electrically conductive line structure; and

each of the electrically conductive line structures comprises a pair of sidewalls that generally extend along the first horizontal direction and including vertical convex surface portions that are adjoined among one another.

3. The three-dimensional memory device of claim 2, further comprising additional insulating layers overlying the alternating stack, wherein:

each of the at least one drain select level conductive layer is located between a respective pair of the additional insulating layers; and

the insulating layers and the additional insulating layers comprise a first electrically insulating material.

4. The three-dimensional memory device of claim 3, further comprising electrically insulating line structures that generally extend along the first horizontal direction and comprising a second electrically insulating material are located between each laterally neighboring pair of the electrically conductive line structures located at a same level.

5. The three-dimensional memory device of claim 4, wherein each of the electrically insulating line structures comprises a pair of sidewalls that generally extend along the first horizontal direction and including vertical concave surface portions that are adjoined among one another.

6. The three-dimensional memory device of claim 1, wherein:

the memory stack structures are arranged as a first periodic hexagonal array;

the respective array of drain select level channel portions is a respective second periodic hexagonal array; and

wherein the first periodic hexagonal array and each second periodic hexagonal array has a same periodicity along the first horizontal direction and different periodicities along the second horizontal direction.

7. The three-dimensional memory device of claim 1, further comprising a pair of backside trenches vertically extending through the alternating stack and the at least one drain select level conductive layer and laterally extending along the first horizontal direction, wherein:

each of the electrically conductive layers within the alternating stack laterally extends continuously along the second horizontal direction between the pair of backside trenches; and

each of the electrically conductive line structures is located between the pair of backside trenches.

8. The three-dimensional memory device of claim 7, wherein each of the pair of backside trenches comprises:

a lower backside trench vertically extending through the alternating stack and including a first conductive via structure including a metallic conductive material; and

an upper backside trench vertically extending through the at least one drain select level conductive layer and including a second conductive via structure comprising a same doped semiconductor material as the drain select level channel portions.

9. The three-dimensional memory device of claim 8, further comprising:

an upper insulating spacer laterally surrounding the second conductive via structure;

a pair of electrically conductive rails contacting a respective sidewall of the upper insulating spacer and having a uniform vertical cross-sectional shape along the first horizontal direction; and

a pair of electrically insulating line structures contacting a respective one of the pair of electrically conductive line structures.

10. The three-dimensional memory device of claim 7, wherein each of the pair of backside trenches comprises:

a lower backside trench vertically extending through the alternating stack and including a first insulating spacer;

an upper backside trench vertically extending through the at least one drain select level conductive layer and including an inner insulating spacer having a same thickness as the first insulating spacer and an outer insulating spacer contacting an outer sidewall of the inner insulating spacer; and

a conductive material portion that extends through the lower backside trench and the upper backside trench.

11. The three-dimensional memory device of claim 1, wherein:

the alternating stack comprises a terrace region in which each electrically conductive layer other than a topmost electrically conductive layer within the alternating stack laterally extends farther than any overlying electrically conductive layer within the alternating stack;

the terrace region includes stepped surfaces of the alternating stack that continuously extend from a bottommost layer within the alternating stack to a topmost layer within the alternating stack; and

support pillar structures extend through the stepped surfaces and through a retro-stepped dielectric material portion that overlies the stepped surfaces.

12. The three-dimensional memory device of claim 1, wherein:

the three-dimensional memory device comprises a monolithic three-dimensional NAND memory device;

the electrically conductive layers comprise, or are electrically connected to, a respective word line of the monolithic three-dimensional NAND memory device;

the substrate comprises a silicon substrate;

the monolithic three-dimensional NAND memory device comprises an array of monolithic three-dimensional NAND strings over the silicon substrate;

at least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings;

the silicon substrate contains an integrated circuit comprising a driver circuit for the memory device located thereon;

the electrically conductive layers comprise a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate, the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level; and

the array of monolithic three-dimensional NAND strings comprises;

a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate, and

a plurality of charge storage elements, each charge storage element located adjacent to a respective one of the plurality of semiconductor channels.

13. A method of forming a three-dimensional memory device, comprising:

forming an alternating stack of insulating layers and spacer material layers over a substrate, wherein the spacer material layers are formed as, or are subsequently replaced by, electrically conductive layers;

forming memory openings through the alternating stack;

forming memory stack structures in the memory openings, wherein each of the memory stack structures comprises a memory film and a memory level channel portion contacting an inner sidewall of the memory film;

forming at least one drain select level dielectric layer over the alternating stack;

forming drain select level openings through the at least one drain select level dielectric layer;

forming drain select level lateral recesses by removing portions of the at least one drain select level dielectric layer through the drain select level openings, wherein the drain select level lateral recesses are laterally spaced among one another by electrically insulating line structures that are remaining portions of the at least one drain select level dielectric layer;

forming at least one drain select level conductive layer in the drain select level lateral recesses, wherein each of the at least one drain select level conductive layer comprises electrically conductive line structures that laterally extend along a first horizontal direction and are laterally spaced apart among one another by the electrically insulating line structures along a second horizontal direction;

forming drain select level gate dielectrics at a periphery of each of the drain select level openings; and

forming drain select level channel portions in remaining volumes of the drain select level openings.

14. The method of claim 13, wherein the at least one drain select level conductive layer is formed by:

depositing a conductive material in the drain select level lateral recesses employing the drain select level openings as a conduit for transporting the conductive material; and

removing portions of the conductive material from inside the drain select level openings.

15. The method of claim 13, wherein:

each of the drain select level channel portions is formed directly on a respective one of the memory level channel portions,

the memory stack structures are arranged in rows that extend along the first horizontal direction with a first row-to-row pitch along the second horizontal direction across an area including two or more electrically conductive line structures of a same drain select level;

for each electrically conductive line structure, a respective array of drain select level channel portions extends through the electrically conductive line structure, and drain select level channel portions within the respective array are arranged in at least four rows that extend along the first horizontal direction with a second row-to-row pitch along the second horizontal direction; and

the second row-to-row pitch is less than the first row-to-row pitch.

16. The method of claim 15, wherein:

the memory stack structures are arranged as a first periodic hexagonal array;

the respective array of drain select level channel portions is a respective second periodic hexagonal array; and

wherein the first periodic hexagonal array and each second periodic hexagonal array has a same periodicity along the first horizontal direction and different periodicities along the second horizontal direction.

17. The method of claim 13, wherein the at least one drain select level conductive layer is formed prior to, or after, formation of the electrically conductive layers employing a different deposition process than a deposition process employed to form the electrically conductive layers.

18. The method of claim 13, wherein the drain select level lateral recesses are formed by isotropically etching a material of the at least one drain select level dielectric layer employing an etchant that is provided into the drain select level openings.

19. The method of claim 18, wherein:

each of the electrically insulating line structures laterally extends along a first horizontal direction and includes multiple concave sidewalls that are adjoined among one another; and

each of the electrically conductive line structures laterally extends along the first horizontal direction and includes multiple convex sidewalls that are adjoined among one another.

20. The method of claim 13, further comprising forming additional insulating layers over the alternating stack, wherein:

each of the at least one drain select level dielectric layer is located between a respective pair of the additional insulating layers;

the insulating layers and the additional insulating layers comprise a first electrically insulating material; and

removal of the portions of the at least one drain select level dielectric layer is performed by an isotropic etch process that is selective a material of the additional insulating layers.

21. The method of claim 13, further comprising forming a pair of backside trenches through the alternating stack and the at least one drain select level dielectric layer, wherein:

each of the pair of backside trenches laterally extends along a first horizontal direction;

each of the electrically conductive layers within the alternating stack laterally extends continuously between the pair of backside trenches; and

each of the electrically conductive line structures is located between the pair of backside trenches.

22. The method of claim 13, further comprising:

forming a lower backside trench through the alternating stack;

forming a lower insulating spacer and a first conductive via structure in the lower backside trench;

forming an upper backside trench through the at least one drain select level dielectric layer and directly above the first conductive via structure; and

forming an upper insulating spacer laterally surrounding a second conductive via structure within the upper backside trench, wherein the second conductive via structure and the drain select level channel portions are formed by deposition of a doped semiconductor material.

23. The method of claim 13, wherein the spacer material layers are formed as sacrificial material layers, and the method further comprises:

forming an upper backside trench through the at least one drain select level dielectric layer after formation of the at least one drain select level conductive layer through remaining portions of the at least one drain select level dielectric layer;

forming an outer insulating spacer around a periphery of the upper backside trench;

forming a lower backside trench through the alternating stack within an area that is laterally enclosed by the outer insulating spacer;

replacing the sacrificial material layers with the electrically conductive layers by first introducing an etchant that removes the sacrificial material layers and followed by introducing a conductive material that forms the electrically conductive layers through the upper and lower backside trenches.

24. The method of claim 13, wherein:

the three-dimensional memory device comprises a monolithic three-dimensional NAND memory device;

the electrically conductive layers comprise, or are electrically connected to, a respective word line of the monolithic three-dimensional NAND memory device;

the substrate comprises a silicon substrate;

the monolithic three-dimensional NAND memory device comprises an array of monolithic three-dimensional NAND strings over the silicon substrate;

at least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings;

the silicon substrate contains an integrated circuit comprising a driver circuit for the memory device located thereon;

the electrically conductive layers comprise a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate, the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level; and

the array of monolithic three-dimensional NAND strings comprises;

a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate, and

a plurality of charge storage elements, each charge storage element located adjacent to a respective one of the plurality of semiconductor channels.