Semiconductor device with surface insulating film
First Claim
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1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion;
a gate trench formed at a surface side of the cell portion;
a gate electrode buried in the gate trench via a gate insulating film; and
a gate finger to make contact with the gate electrode, the gate finger disposed in at least the outer peripheral portion,wherein the gate trench includes a line-shaped trench that reaches the outer peripheral portion and runs across the gate finger under the gate finger.
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Abstract
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, and a surface insulating film disposed in a manner extending across the cell portion and the outer peripheral portion, and in the cell portion, formed to be thinner than a part in the outer peripheral portion.
20 Citations
25 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion; a gate trench formed at a surface side of the cell portion; a gate electrode buried in the gate trench via a gate insulating film; and a gate finger to make contact with the gate electrode, the gate finger disposed in at least the outer peripheral portion, wherein the gate trench includes a line-shaped trench that reaches the outer peripheral portion and runs across the gate finger under the gate finger. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification