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Semiconductor device

  • US 9,923,097 B2
  • Filed: 12/03/2014
  • Issued: 03/20/2018
  • Est. Priority Date: 12/06/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film;

    a gate electrode over the oxide semiconductor film;

    a gate insulating film between the oxide semiconductor film and the gate electrode; and

    a nitride insulating film over and in contact with the oxide semiconductor film,wherein the oxide semiconductor film comprises a first region and a second region,wherein the first region is in contact with the gate insulating film,wherein the second region is in contact with the nitride insulating film,wherein the second region contains hydrogen and a rare gas element,wherein a concentration of the rare gas element in the second region is higher than a concentration of the rare gas element in the first region,wherein the nitride insulating film contains one of silicon nitride and silicon nitride oxide,wherein an end portion of the gate insulating film extends beyond an end portion of the gate electrode,wherein the end portion of the gate insulating film is in contact with the nitride insulating film, andwherein variation in resistivity of the second region at temperatures from 80 K to 290 K is more than −

    20% to less than +20%.

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