Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
First Claim
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1. A method of operating a semiconductor device, comprising:
- in the ON state, applying a voltage to an insulated gate to thereby invert a portion of a second-conductivity-type body region interposed between a first-conductivity-type source region and a second-conductivity-type drift region to thereby form a channel, and thereby allow passage of majority carriers from said source region through said channel, and through a portion of said drift region which has been inverted by immobile permanent net electrostatic charge, to a first-conductivity-type drain region; and
in the OFF state, at least partially balancing the space charge of depleted portions of said drift region with said immobile permanent net electrostatic charge; and
reducing capacitive coupling by a shield electrode which is interposed between said gate electrode and said drain.
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Abstract
Lateral power devices where immobile electrostatic charge is emplaced in dielectric material adjoining the drift region. A shield gate is interposed between the gate electrode and the drain, to reduce the Miller charge. In some embodiments the gate electrode is a trench gate, and in such cases the shield electrode too is preferably vertically extended.
4 Citations
7 Claims
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1. A method of operating a semiconductor device, comprising:
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in the ON state, applying a voltage to an insulated gate to thereby invert a portion of a second-conductivity-type body region interposed between a first-conductivity-type source region and a second-conductivity-type drift region to thereby form a channel, and thereby allow passage of majority carriers from said source region through said channel, and through a portion of said drift region which has been inverted by immobile permanent net electrostatic charge, to a first-conductivity-type drain region; and in the OFF state, at least partially balancing the space charge of depleted portions of said drift region with said immobile permanent net electrostatic charge; and reducing capacitive coupling by a shield electrode which is interposed between said gate electrode and said drain. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification