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Recovery from cross-temperature read failures by programming neighbor word lines

  • US 9,928,126 B1
  • Filed: 09/27/2017
  • Issued: 03/27/2018
  • Est. Priority Date: 06/01/2017
  • Status: Active Grant
First Claim
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1. A memory system, comprising:

  • an interface, configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values; and

    storage circuitry configured to;

    program a data unit to a first group of the memory cells;

    read the data unit from the first group using at least a read threshold to produce a first readout;

    in response to detecting that reading the data unit has failed because at the time of reading the first group, the read threshold has fallen outside a range of read thresholds supported by the memory cells, due to a temperature difference between a time of programming the first group and a time of reading the first group, program a second different group of the memory cells;

    after programming the second group, re-read the data unit from the first group using the at least read threshold to produce a second readout; and

    recover the data unit from the second readout.

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