Estimation of level-thresholds for memory cells

• US 9,928,923 B2
• Filed: 09/18/2014
• Issued: 03/27/2018
• Est. Priority Date: 09/26/2013
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Mittelholzer, Thomas, Papandreou, Nikolaos, Pozidis, Haris
• Primary Examiner(s): Tran, Anthan
• Assistant Examiner(s): Siddique, Mushfique
• Application Number:
  US14/489,983
• Publication Number:
  US 20150085591A1
• Time in Patent Office: 1,286 Days
• Field of Search: 365201
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 29/021 in voltage or current generators
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
• CPC Class Codes: G11C 7/14 Dummy cell management; Sense reference voltage generators

Abstract

Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.

Claims

1. A level-threshold determination method for q-level memory cells, the method comprising:

reading a plurality of the memory cells to obtain respective read signal components;

processing the read signal components in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of a distribution of the read signal components in order of signal level;

scanning the signal level vector with a sliding window of length greater than a spacing of successive window positions in the scan;

at each window position, calculating a metric dependent on the elements of the signal level vector in the window and determining a reference value for the elements in the window, wherein the metric is dependent on absolute difference between each element in the window and said reference value; and

determining a level-threshold for successive memory cell levels in dependence on variation of said metric over the scan and determining said level-threshold in dependence on location of a local maximum corresponding to that threshold in a variation of the metric over the scan, wherein a scan is performed using a scanner comprising a register configured for storing an input signal level vector and scan logic configured for calculating a measurement quantity.

2. A method as claimed in claim 1 including producing the signal level vector by ordering the read signal components according to signal level.

3. A method as claimed in claim 1 including producing the signal level vector by binning the read signal components according to signal level.

4. A method as claimed in claim 1 wherein q>

2, the method including determining a level-threshold for each pair of q−

1 pairs of successive memory cell levels in dependence on the variation of said metric over the scan.

5. A method as claimed in claim 4 wherein the level threshold for the q−

1 pairs of successive memory cell levels are determined in dependence on location of q−

1 largest local maxima in the metric variation over the scan.

6. A method as claimed in claim 5 wherein the memory cells store respective symbols of N-symbol codewords of a predefined set of valid codewords, the method including:

reading the memory cells storing a group of the codewords to obtain respective read signals each comprising N of said read signal components;

detecting a codeword corresponding to each said read signal in dependence on said level-thresholds for the q−

1 pairs of successive memory cell levels;

calculating an error value dependent on a number of valid codewords detected for the group; and

if the error value exceeds a predetermined error threshold, replacing the level-threshold corresponding to a (q−

1)th-largest local maximum by a new level threshold determined in dependence on location of the qth-largest local maximum in said metric variation over the scan.

7. A method as claimed in claim 1 including determining said level-threshold from the elements in the window at the window position corresponding to said maximum by identifying the element which is most different from the next element in the window.

8. A method as claimed in claim 1 wherein said reference value comprises an average of the elements in the window.

9. A method as claimed in claim 8 wherein said average comprises a mean.

10. A method as claimed in claim 1 wherein said metric comprises a norm of the differences between respective elements in the window and an average.

11. A method for detecting codewords each having N symbols which are stored in respective q-level memory cells, the method comprising:

reading a plurality of the memory cells to obtain respective read signal components, the memory cells storing respective symbols of N-symbol codewords of a predefined set of valid codewords;

processing the read signal components in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of a distribution of read signal components in order of signal level;

scanning the signal level vector with a sliding window of length greater than a spacing of successive window positions in the scan;

at each window position, calculating a metric dependent on the elements of the signal level vector in the window;

detecting a codeword corresponding to each said read signal in dependence on the or each level-threshold so determined; and

determining a level-threshold for successive memory cell levels in dependence on variation of said metric over the scan and determining said level-threshold in dependence on location of a local maximum corresponding to that threshold in a variation of the metric over the scan, wherein a scan is performed using a scanner comprising a register configured for storing an input signal level vector and scan logic configured for calculating a measurement quantity.

12. A method as claimed in claim 11 including:

calculating statistical data for the distribution of said read signal components corresponding to each memory cell level in accordance with the or each said level-threshold; and

detecting the codeword corresponding to each said read signal in dependence on said statistical data.

13. A method as claimed in claim 11 wherein the method includes determining a reference value for the elements in the window, wherein the metric is dependent on absolute difference between each element in the window and said reference value.

14. A method as claimed in claim 13 wherein q>

2, the method including determining a level-threshold for each pair of q−

1 pairs of successive memory cell levels in dependence on the variation of said metric over the scan.

15. An apparatus for level-threshold determination on readout of q-level memory cells, the apparatus comprising:

a vector generator for receiving a plurality of read signal components, obtained by reading respective memory cells, and processing the read signal components in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of a distribution of read signal components in order of signal level;

a sliding-window scanner for scanning the signal level vector with a sliding window of length greater than a spacing of successive window positions in the scan, and, at each window position, calculating a metric dependent on the elements of the signal level vector in the window and determining a reference value for the elements in the window, wherein the metric is dependent on absolute difference between each element in the window and said reference value; and

a threshold identifier for determining a level-threshold for successive memory cell levels in dependence on variation of said metric over the scan, wherein a scan is performed using a scanner comprising a register configured for storing an input signal level vector and scan logic configured for calculating a measurement quantity.

16. An apparatus as claimed in claim 15 wherein q>

2, the threshold identifier being configured to determine a level-threshold for each of q−

1 pairs of successive memory cell levels in dependence on variation of said metric over the scan.

17. The apparatus as claimed in claim 16, the threshold identifier being configured to determine said level-threshold in dependence on location of a local maximum corresponding to that threshold in the variation of the metric over the scan.

18. An apparatus as claimed in claim 15 further comprising:

memory having q-level memory cells;

read/write circuit for writing symbols in respective memory cells and for reading memory cells to obtain respective read signal components each corresponding to a said symbol; and

a detector for detecting symbols corresponding to said read signal components in dependence on the or each level-threshold so determined.

19. An apparatus as claimed in claim 18 wherein said memory cells are phase-change memory cells.

20. The apparatus as claimed in claim 15, the threshold identifier being configured to determine said level-threshold in dependence on location of a local maximum corresponding to that threshold in a variation of the metric over the scan.