Method of optimizing an interface for processing of an organic semiconductor

• US 9,929,215 B2
• Filed: 04/21/2017
• Issued: 03/27/2018
• Est. Priority Date: 07/12/2016
• Status: Active Grant

• Current Assignee: DPIX LLC (DpiX Holding LLC)
• Original Assignee: DPIX LLC (DpiX Holding LLC)
• Inventors: Rodriquez, Robert, O'Rourke, Shawn Michael, Johnson, Michael Robert, Tandon, Sanjeev
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US15/494,226
• Publication Number:
  US 20180019284A1
• Time in Patent Office: 340 Days
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: H10K 71/231 by etching of existing layers
• CPC Class Codes: H10K 71/233 by photolithographic etching

Abstract

A method of forming an organic semiconductor includes forming a thin film transistor (“TFT”) backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.

Claims

1. A method of forming an organic semiconductor comprising:

forming a thin film transistor (“

TFT”

) backplane;

forming a pixel well over the TFT backplane using a photoresist;

performing a first plasma etch of the pixel well;

stripping the photoresist in the pixel well;

performing a second plasma etch of the pixel well;

performing a first wash of the pixel well;

exposing the pixel well to ultraviolet light;

performing a second wash of the pixel well; and

forming an organic photodiode in the pixel well.

2. The method of claim 1, wherein the first plasma etch is performed using a gas comprising a fluorocarbon compound and oxygen.

3. The method of claim 2, wherein the first plasma etch is performed using a gas further comprising chlorine, boron chloride, and argon gas.

4. The method of claim 1, wherein stripping the photoresist comprises applying a photoresist stripping material.

5. The method of claim 1, wherein the second plasma etch is performed using a gas comprising a fluorocarbon compound and oxygen.

6. The method of claim 5, wherein the second plasma etch is performed using gas further comprising chlorine, boron chloride, and argon gas.

7. The method of claim 1, wherein the first wash is followed by a drying step.

8. The method of claim 1, wherein the pixel well is exposed to ultraviolet light between 30 and 300 seconds.

9. The method of claim 1, wherein the second wash is followed by a drying step.

10. The method of claim 1, further comprising forming a bank layer between the TFT backplane and the pixel well.

11. A method of forming an organic semiconductor comprising:

forming a thin film transistor (“

TFT”

) backplane;

forming a pixel well over the TFT backplane using a photoresist;

performing a plasma etch of the pixel well;

stripping the photoresist in the pixel well;

performing a residue rinse of the pixel well;

performing a first wash of the pixel well;

exposing the pixel well to ultraviolet light;

performing a second wash of the pixel well; and

forming an organic photodiode in the pixel well.

12. The method of claim 11, wherein the plasma etch is performed using a gas comprising a fluorocarbon compound and oxygen.

13. The method of claim 12, wherein the first plasma etch is performed using a gas further comprising chlorine, boron chloride, and argon gas.

14. The method of claim 11, wherein stripping the photoresist comprises applying a photoresist stripping material.

15. The method of claim 11, wherein the residue rinse is performed using a rinse material comprising ammonium fluoride, hydrofluoric acid, and ethylene glycol.

16. The method of claim 11, wherein the residue rinse is performed between 60 and 300 seconds at room temperature.

17. The method of claim 11, wherein the first wash is followed by a drying step.

18. The method of claim 11, wherein the pixel well is exposed to ultraviolet light between 30 and 300 seconds.

19. The method of claim 11, wherein the second wash is followed by a drying step.

20. The method of claim 11, further comprising forming a bank layer between the TFT backplane and the pixel well.