Light emitting diode chip having electrode pad

• US 9,929,314 B2
• Filed: 10/27/2016
• Issued: 03/27/2018
• Est. Priority Date: 11/18/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Ye Seul, Kim, Kyoung Wan, Yoon, Yeo Jin, Oh, Sang Hyun, Lee, Keum Ju, Lee, Jin Woong, Jeong, Da Yeon, Woo, Sang Won
• Primary Examiner(s): YEUNG LOPEZ, FEIFEI
• Application Number:
  US15/336,510
• Publication Number:
  US 20170047483A1
• Time in Patent Office: 516 Days
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Claims

1. A light emitting diode (LED) device comprising:

a substrate;

a light emitting structure disposed over the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;

a first electrode pad disposed over the first semiconductor layer;

a transparent electrode layer disposed over the second semiconductor layer;

a second electrode pad disposed over the transparent electrode layer;

a first extension extending from the first electrode pad; and

a second extension extending from the second electrode pad,

wherein the first extension includes first portions in contact with the first semiconductor layer and second portions not in contact with the first semiconductor layer, wherein one of the first portions and one of the second portions are alternately disposed along the first extension, and wherein the second extension includes a plurality of portions extending from the second electrode pad.

2. The LED device of claim 1, wherein the first extension include a plurality of portions extending from the first electrode pad.

3. The LED device of claim 2, wherein one of the plurality of portions of the first extension is disposed between the plurality of portions of the second extension.

4. The LED device of claim 2, wherein one of the plurality of portions of the second extension is disposed between the plurality of portions of the first extension.

6. The LED device of claim 1, further comprising:

a first functional layer disposed between the substrate and the first electrode pad.

7. The LED device of claim 6, further comprising;

a second functional layer disposed between the substrate and the second electrode pad.

8. The LED device of claim 7, wherein the first functional layer or/and the second functional layer include insulation material.

9. The LED device of claim 8, wherein the first functional layer or/and the second functional layer include a distributed Bragg reflector.

10. The LED device of claim 7, wherein the second functional layer is disposed below the transparent layer.

11. The LED device of claim 6, wherein the first electrode pad is insulated from the first semiconductor layer by the first functional layer.

12. The LED device of claim 1, wherein the transparent layer includes an indium tin oxide (ITO) or material oxide.

13. The LED device of claim 1, further comprising an insulation layer contacting the first semiconductor layer and positioned between the first extension and the first semiconductor layer.

15. The LED device of claim 3, wherein the insulation layer includes at least two portions having different size from each other.

16. The LED device of claim 6, further comprising an insulation layer contacting the first semiconductor layer and positioned between the first extension and the first semiconductor layer;

wherein the function layer and the insulation layer include same material.

17. The LED device of claim 1, further comprising an additional light emitting structure disposed over the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;

wherein the light emitting structure and the additional light emitting structure are connected by a metal disposed on the substrate;

wherein the metal has same material with the first extension.

5. A light emitting diode (LED) device comprising:

a substrate;

a light emitting structure disposed over the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;

a first electrode pad disposed over the first semiconductor layer;

a transparent electrode layer disposed over the second semiconductor layer;

a second electrode pad disposed over the transparent electrode layer;

a first extension extending from the first electrode pad; and

a second extension extending from the second electrode pad,

wherein the first extension includes first portions in contact with the first semiconductor layer and second portions not in contact with the first semiconductor layer, wherein one of the first portions and one of the second portions are alternately disposed along the first extension, and wherein the second extension extend toward the first electrode pad and has a curved shape near the first electrode pad.

18. The LED device of claim 5, further comprising:

a first functional layer disposed between the substrate and the first electrode pad.

19. The LED device of claim 5, wherein the transparent layer includes an indium tin oxide (ITO) or material oxide.

20. The LED device of claim 5, further comprising an insulation layer contacting the first semiconductor layer and positioned between the first extension and the first semiconductor layer.

14. A light emitting diode (LED) device comprising:

a substrate;

a light emitting structure disposed over the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;

a first electrode pad disposed over the first semiconductor layer;

a transparent electrode layer disposed over the second semiconductor layer;

a second electrode pad disposed over the transparent electrode layer;

a first extension extending from the first electrode pad; and

a second extension extending from the second electrode pad,

wherein the first extension includes first portions in contact with the first semiconductor layer and second portions not in contact with the first semiconductor layer, wherein one of the first portions and one of the second portions are alternately disposed along the first extension, and wherein one of the first portions has different length comparing to another of the first portions.

21. The LED device of claim 14, wherein the transparent layer includes an indium tin oxide (ITO) or material oxide.