Methodology to avoid gate stress for low voltage devices in FDSOI technology
First Claim
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1. A method, comprising:
- applying a first voltage to a source terminal of a first transistor in a first semiconductor layer;
applying the first voltage to a gate terminal of the first transistor, the first transistor having a respective source, a respective channel, and a respective drain;
switching the first transistor on or off by applying a switching voltage to a first portion of a second semiconductor layer that is separated from the first semiconductor layer by a dielectric layer;
applying a second voltage to a source terminal of a second transistor in the first semiconductor layer;
applying the second voltage to a gate terminal of the second transistor, the second transistor having a respective source, a respective channel, and a respective drain; and
switching the second transistor on or off by applying the switching voltage to a second portion of the second semiconductor layer.
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Abstract
A CMOS device is formed in an FDSOI integrated circuit die. By retrieving the MOS functionality for gate voltage levels higher than its stress limits, second gate availability in these devices is being used, and hence removing the additional circuitry that would have been used for protecting the devices from such stress. Implementation in an inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.
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Citations
19 Claims
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1. A method, comprising:
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applying a first voltage to a source terminal of a first transistor in a first semiconductor layer; applying the first voltage to a gate terminal of the first transistor, the first transistor having a respective source, a respective channel, and a respective drain; switching the first transistor on or off by applying a switching voltage to a first portion of a second semiconductor layer that is separated from the first semiconductor layer by a dielectric layer; applying a second voltage to a source terminal of a second transistor in the first semiconductor layer; applying the second voltage to a gate terminal of the second transistor, the second transistor having a respective source, a respective channel, and a respective drain; and switching the second transistor on or off by applying the switching voltage to a second portion of the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method, comprising:
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providing a semiconductor substrate having a heavily doped region and a buried oxide layer, the buried oxide layer disposed below a first semiconductor layer and above the heavily doped region; forming an inverter in the first semiconductor layer, the inverter including a p-type metal-oxide-semiconductor (MOS) transistor and an n-type MOS transistor; forming first and second back gates in the heavily doped region, the first back gate underlying the p-type MOS transistor and the second back gate underlying the n-type MOS transistor; forming first and second back gate input contacts to the first and second back gates, respectively, the first and second back gate input contacts extending through the first semiconductor layer and the buried oxide layer; coupling a source and a gate of the p-type transistor to one another; and coupling a source and a gate of the n-type transistor to one another. - View Dependent Claims (8, 9, 10, 11, 15)
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12. A method, comprising:
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providing a semiconductor substrate having a heavily doped region and a buried oxide layer therein, the buried oxide layer disposed between a first semiconductor layer and the heavily doped region; forming a p-type transistor in the first semiconductor layer, the p-type transistor having a source region, a drain region, a channel region and a gate; forming an n-type transistor adjacent to the p-type transistor in the first semiconductor layer, the n-type transistor having a source region, a drain region, a channel region and a gate; forming an isolation trench between the n-type and p-type transistors; forming back gate input contacts to the heavily doped region; forming output contacts to the drain regions of the transistors; forming power supply contacts to the source region and the gate of the p-type transistor; and forming ground contacts to the source region and the gate of the n-type transistor. - View Dependent Claims (13, 14, 16, 17, 18, 19)
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Specification