Integrated multistage taper coupler for waveguide to fiber coupling

• US 9,933,575 B2
• Filed: 04/12/2017
• Issued: 04/03/2018
• Est. Priority Date: 02/06/2014
• Status: Expired due to Fees

• Current Assignee: Skorpios Technologies Inc.
• Original Assignee: Skorpios Technologies Inc.
• Inventors: Kumar, Nikhil, Li, Guoliang, Krasulick, Stephen
• Primary Examiner(s): RAHLL, JERRY T
• Application Number:
  US15/485,858
• Publication Number:
  US 20170351033A1
• Time in Patent Office: 356 Days
• Field of Search: None
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide

Abstract

A waveguide coupler has a compression region and an expansion region for coupling light between a silicon waveguide and an optical fiber. The compression region receives light from the silicon waveguide and compresses an optical mode of the light. Light is transmitted from the compression region to an expansion region. The expansion region expands the light to have a larger cross section. Light is then transmitted to the optical fiber.

Claims

1. A device comprising:

a compression region, the compression region operable to;

receive an optical beam from a semiconductor waveguide,

compress the optical beam to have a smaller cross section compared to light confined in the semiconductor waveguide, and

transmit optical beam to an expansion region; and

the expansion region, the expansion region operable to;

receive the optical beam from the compression region,

expand the optical beam to have a larger cross section compared to light confined in the semiconductor waveguide, and

transmit the optical beam to an optical fiber, wherein the expansion region has a refractive index equal to or greater than 1.47 and equal to or less than 2.1.

2. The device as recited in claim 1, wherein the expansion region has a refractive index equal to or greater than 1.9.

3. The device as recited in claim 1, further comprising the optical fiber optically coupled with the expansion region.

4. The device as recited in claim 1, wherein the expansion region overlaps at least a portion of the compression region.

5. The device as recited in claim 1, wherein:

the expansion region comprises a shoulder and a ridge, and

the shoulder is wider than the ridge at a portion of the expansion region.

6. The device as recited in claim 5, wherein the shoulder and the ridge are made of SiON or SiN.

7. The device as recited in claim 1, wherein the compression region has a higher index of refraction than the expansion region.

8. The device as recited in claim 1, wherein the compression region comprises crystalline silicon.

9. The device as recited in claim 1, wherein the compression region and the expansion region have a combined length equal to or greater than 0.25 mm and equal to or less than 3 mm.

10. The device as recited in claim 1, wherein the compression region has a height equal to or greater than 1200 nm and equal to or less than 1700 nm.

11. The device as recited in claim 1, wherein the compression region has a width equal to or greater than 1500 nm and equal to or less than 8000 nm.

12. A method for coupling a semiconductor waveguide to an optical fiber, the method comprising:

transmitting a beam of light from a waveguide into an optical coupler;

compressing the beam of light received from the waveguide in a first region of the optical coupler;

expanding the beam of light in a second region of the optical coupler after compressing the beam of light in the first region, wherein the first region has a higher index of refraction than the second region; and

transmitting the beam of light from the optical coupler to an optical fiber after expanding the beam of light in the second region of the optical coupler.

13. The method of claim 12, wherein the second region has an index of refraction equal to or greater than 1.47 and equal to or less than 2.1.

14. The method of claim 12, wherein the second region has an index of refraction equal to or greater than 1.9 and equal to or less than 2.1.

15. The method of claim 12, wherein the second region partially overlaps the first region.

16. The method of claim 12, wherein:

the second region comprises a shoulder and a ridge, and

the shoulder is wider than the ridge at a portion of the second region.

17. The method of claim 12, wherein the second region comprises SiON or SiN.

18. The method of claim 12, wherein the first region comprises crystalline silicon.

19. The method of claim 12, wherein the first region has a height equal to or greater than 1200 nm and equal to or less than 1700 nm.

20. The method of claim 12, wherein the first region has a width equal to or greater than 1500 nm and equal to or less than 8000 nm.