Semiconductor device and electronic appliance

• US 9,934,747 B2
• Filed: 04/25/2017
• Issued: 04/03/2018
• Est. Priority Date: 09/16/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Umezaki, Atsushi
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): Almo, Khareem E
• Application Number:
  US15/496,061
• Publication Number:
  US 20170229086A1
• Time in Patent Office: 343 Days
• Field of Search: None
• CPC Class Codes: G09G 2310/0251 Precharge or discharge of pixel before applying new pixel voltage
• CPC Class Codes: G09G 2310/0286 Details of a shift registers arranged for use in a driving circuit
• CPC Class Codes: G09G 2310/0289 Details of voltage level shifters arranged for use in a driving circuit
• CPC Class Codes: G09G 2310/08 Details of timing specific for flat panels, other than clock recovery
• CPC Class Codes: G09G 2330/021 Power management, e.g. power saving
• CPC Class Codes: G09G 3/3674 Details of drivers for scan electrodes
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G11C 19/00 Digital stores in which the information is moved stepwise, e.g. shift registers
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/018557 Coupling arrangements; Impedance matching circuits
• CPC Class Codes: H03K 19/018571 of complementary type, e.g. CMOS

Abstract

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Claims

1. A semiconductor device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein a gate of the third transistor is electrically connected to a gate of the sixth transistor, and

wherein the other of the source and the drain of the second transistor, the other of the source and the drain of the fourth transistor, and the other of the source and the drain of the sixth transistor are electrically connected to a first wiring.

2. The semiconductor device according to claim 1, wherein a channel width of the first transistor is larger than a channel width of the fifth transistor.

3. The semiconductor device according to claim 1, wherein a channel width of the second transistor is larger than a channel width of each of the fifth transistor and the sixth transistor.

4. The semiconductor device according to claim 1, wherein a channel width of the second transistor is larger than a channel width of the first transistor.

5. The semiconductor device according to claim 1, wherein a channel width of the third transistor is larger than a channel width of the fourth transistor.

6. The semiconductor device according to claim 1,

wherein a gate of the second transistor is electrically connected to the gate of the fourth transistor,

wherein the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are electrically connected to a second wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a third wiring, and

wherein a gate of the fifth transistor is electrically connected to a fourth wiring.

7. An electronic appliance comprising the semiconductor device according to claim 1.

8. A semiconductor device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein a gate of the third transistor is electrically connected to a gate of the sixth transistor,

wherein the other of the source and the drain of the second transistor, the other of the source and the drain of the fourth transistor, and the other of the source and the drain of the sixth transistor are electrically connected to a first wiring, and

wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises a semiconductor layer comprising an oxide semiconductor.

9. The semiconductor device according to claim 8, wherein a channel width of the first transistor is larger than a channel width of the fifth transistor.

10. The semiconductor device according to claim 8, wherein a channel width of the second transistor is larger than a channel width of each of the fifth transistor and the sixth transistor.

11. The semiconductor device according to claim 8, wherein a channel width of the second transistor is larger than a channel width of the first transistor.

12. The semiconductor device according to claim 8, wherein a channel width of the third transistor is larger than a channel width of the fourth transistor.

13. The semiconductor device according to claim 8,

wherein a gate of the second transistor is electrically connected to the gate of the fourth transistor,

wherein the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are electrically connected to a second wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a third wiring, and

wherein a gate of the fifth transistor is electrically connected to a fourth wiring.

14. The semiconductor device according to claim 8, wherein the oxide semiconductor comprises indium.

15. The semiconductor device according to claim 8, wherein the oxide semiconductor comprises indium, gallium, and zinc.

16. An electronic appliance comprising the semiconductor device according to claim 8.

17. A display device comprising:

a gate driver comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor; and

a pixel portion electrically connected to the gate driver,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein a gate of the third transistor is electrically connected to a gate of the sixth transistor,

wherein the other of the source and the drain of the second transistor, the other of the source and the drain of the fourth transistor, and the other of the source and the drain of the sixth transistor are electrically connected to a first wiring, and

wherein the pixel portion comprises a pixel comprising a liquid crystal element.

18. The display device according to claim 17, wherein a channel width of the first transistor is larger than a channel width of the fifth transistor.

19. The display device according to claim 17, wherein a channel width of the second transistor is larger than a channel width of each of the fifth transistor and the sixth transistor.

20. The display device according to claim 17, wherein a channel width of the second transistor is larger than a channel width of the first transistor.

21. The display device according to claim 17, wherein a channel width of the third transistor is larger than a channel width of the fourth transistor.

22. The display device according to claim 17,

wherein a gate of the second transistor is electrically connected to the gate of the fourth transistor,

wherein the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are electrically connected to a second wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a third wiring, and

wherein a gate of the fifth transistor is electrically connected to a fourth wiring.

23. The display device according to claim 17, further comprising an insulating layer over the gate driver,

wherein the insulating layer serves as a sealant.

24. An electronic appliance comprising the display device according to claim 17.

25. A display device comprising:

a gate driver comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor; and

a pixel portion electrically connected to the gate driver,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor,

wherein a gate of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein a gate of the third transistor is electrically connected to a gate of the sixth transistor,

wherein the other of the source and the drain of the second transistor, the other of the source and the drain of the fourth transistor, and the other of the source and the drain of the sixth transistor are electrically connected to a first wiring,

wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises a semiconductor layer comprising an oxide semiconductor, and

wherein the pixel portion comprises a pixel comprising a liquid crystal element.

26. The display device according to claim 25, wherein a channel width of the first transistor is larger than a channel width of the fifth transistor.

27. The display device according to claim 25, wherein a channel width of the second transistor is larger than a channel width of each of the fifth transistor and the sixth transistor.

28. The display device according to claim 25, wherein a channel width of the second transistor is larger than a channel width of the first transistor.

29. The display device according to claim 25, wherein a channel width of the third transistor is larger than a channel width of the fourth transistor.

30. The display device according to claim 25,

wherein a gate of the second transistor is electrically connected to the gate of the fourth transistor,

wherein the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are electrically connected to a second wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a third wiring, and

wherein a gate of the fifth transistor is electrically connected to a fourth wiring.

31. The display device according to claim 25, wherein the oxide semiconductor comprises indium.

32. The display device according to claim 25, wherein the oxide semiconductor comprises indium, gallium, and zinc.

33. The display device according to claim 25, further comprising an insulating layer over the gate driver,

wherein the insulating layer serves as a sealant.

34. An electronic appliance comprising the display device according to claim 25.