Microwave plasma device
First Claim
1. A plasma processing chamber, comprising:
- a plasma processing region that can support a semiconductor substrate;
a power transmission element disposed around the plasma processing chamber, the power transmission element comprising;
an interior cavity to propagate electromagnetic waves, the interior cavity being annular shaped, and surrounding the plasma processing region; and
an annular continuous slit along one side of the power transmission element, the annular continuous slit forming an opening between the interior cavity and an exterior surface of the power transmission element;
a first power feed opening of the interior cavity to receive the electromagnetic waves;
a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity;
a power source that can provide the electromagnetic waves to the power transmission element;
a dielectric component arranged to cover at least a portion of the slit and to transmit at least a portion of energy from the electromagnetic waves through the opening to the plasma processing region; and
a pressure plasma source disposed above the power transmission element, the pressure plasma source including;
(i) a top cover,(ii) an annular cavity disposed below the top cover and surrounding a portion of the plasma processing region,(iii) an electrode disposed along an interior surface of the annular cavity, whereinthe annular cavity comprises a plurality of openings aligned in a vertical direction, andthe plurality of openings facilitate a fluid communication between the annular cavity and the plasma processing region, the plasma processing region extending up to the pressure plasma source; and
(iv) a power supply coupled to the electrode and configured to generate a boundary potential or plasma sheath in the plasma processing region.
1 Assignment
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Accused Products
Abstract
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
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Citations
9 Claims
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1. A plasma processing chamber, comprising:
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a plasma processing region that can support a semiconductor substrate; a power transmission element disposed around the plasma processing chamber, the power transmission element comprising; an interior cavity to propagate electromagnetic waves, the interior cavity being annular shaped, and surrounding the plasma processing region; and an annular continuous slit along one side of the power transmission element, the annular continuous slit forming an opening between the interior cavity and an exterior surface of the power transmission element; a first power feed opening of the interior cavity to receive the electromagnetic waves; a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity; a power source that can provide the electromagnetic waves to the power transmission element; a dielectric component arranged to cover at least a portion of the slit and to transmit at least a portion of energy from the electromagnetic waves through the opening to the plasma processing region; and a pressure plasma source disposed above the power transmission element, the pressure plasma source including; (i) a top cover, (ii) an annular cavity disposed below the top cover and surrounding a portion of the plasma processing region, (iii) an electrode disposed along an interior surface of the annular cavity, wherein the annular cavity comprises a plurality of openings aligned in a vertical direction, and the plurality of openings facilitate a fluid communication between the annular cavity and the plasma processing region, the plasma processing region extending up to the pressure plasma source; and (iv) a power supply coupled to the electrode and configured to generate a boundary potential or plasma sheath in the plasma processing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification