Microwave plasma device

• US 9,934,974 B2
• Filed: 06/19/2014
• Issued: 04/03/2018
• Est. Priority Date: 06/19/2013
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Zhao, Jianping, Funk, Merritt, Chen, Lee
• Primary Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US14/309,106
• Publication Number:
  US 20140374025A1
• Time in Patent Office: 1,384 Days
• Field of Search: 118723 ME, 118723 MW, 118723 E, 118723 ER, 15634535, 15634543-34547, 31511121
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32266 Means for controlling power transmitted to the plasma
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation

Abstract

A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Claims

1. A plasma processing chamber, comprising:

a plasma processing region that can support a semiconductor substrate;

a power transmission element disposed around the plasma processing chamber, the power transmission element comprising;

an interior cavity to propagate electromagnetic waves, the interior cavity being annular shaped, and surrounding the plasma processing region; and

an annular continuous slit along one side of the power transmission element, the annular continuous slit forming an opening between the interior cavity and an exterior surface of the power transmission element;

a first power feed opening of the interior cavity to receive the electromagnetic waves;

a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity;

a power source that can provide the electromagnetic waves to the power transmission element;

a dielectric component arranged to cover at least a portion of the slit and to transmit at least a portion of energy from the electromagnetic waves through the opening to the plasma processing region; and

a pressure plasma source disposed above the power transmission element, the pressure plasma source including;

(i) a top cover,

(ii) an annular cavity disposed below the top cover and surrounding a portion of the plasma processing region,

(iii) an electrode disposed along an interior surface of the annular cavity, wherein

the annular cavity comprises a plurality of openings aligned in a vertical direction, and

the plurality of openings facilitate a fluid communication between the annular cavity and the plasma processing region, the plasma processing region extending up to the pressure plasma source; and

(iv) a power supply coupled to the electrode and configured to generate a boundary potential or plasma sheath in the plasma processing region.

2. The apparatus of claim 1, wherein the plurality of openings comprises a plurality of slits that extends around the side wall.

3. The plasma processing chamber of claim 1, wherein the plurality of openings are substantially horizontal.

4. The plasma processing chamber of claim 1, wherein the plurality of openings comprises an array of holes.

5. The plasma processing chamber of claim 1, wherein the annular cavity is configured to drive non-ambipolar diffusion across the plurality of openings, when a DC bias is applied to the electrode.

6. The plasma processing system of claim 1, wherein the first power feed opening comprises one or more of the following disposed between power transmission element and the power source:

a splitter component to split the electromagnetic waves provided by the power source;

a phase angle shifting component to shift a phase angle of the electromagnetic waves provided by the power source;

or

a field rotation component to rotate a field of the electromagnetic waves provided by the power source.

7. The plasma processing system of claim 1, wherein the first power feed opening comprises two or more of the following disposed between power transmission element and the power source:

a splitter component to split the electromagnetic waves provided by the power source;

a phase angle shifting component to shift a phase angle of the electromagnetic waves provided by the power source;

or

a field rotation component to rotate a field of the electromagnetic waves provided by the power source.

8. The plasma processing system of claim 1, wherein the first power feed opening comprises all of the following components disposed between power transmission element and the power source:

a splitter component to split the electromagnetic waves provided by the power source;

a phase angle shifting component to shift a phase angle of the electromagnetic waves provided by the power source; and

a field rotation component to rotate a field of the electromagnetic waves provided by the power source.

9. The plasma processing chamber of claim 1, wherein the power source is a microwave power source, and wherein the electromagnetic waves provided by the microwave power source have a wavelength and frequency in the microwave spectrum.