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Gas distribution showerhead for inductively coupled plasma etch reactor

  • US 9,934,979 B2
  • Filed: 07/16/2015
  • Issued: 04/03/2018
  • Est. Priority Date: 05/31/2011
  • Status: Active Grant
First Claim
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1. A lower plate of a ceramic showerhead assembly useful in an inductively coupled plasma processing apparatus wherein semiconductor substrates supported on a substrate support are subjected to plasma etching, the lower plate comprising:

  • a lower surface having a lower central portion and a lower outer portion;

    a stepped upper surface having an upper central portion and an upper outer portion, wherein the upper central portion is thicker than the upper outer portion, wherein the upper outer portion includes an annular zone, and wherein the upper central portion is stepped up from the upper outer portion; and

    a plurality of gas holes located in the annular zone and axially extending between the stepped upper surface and the lower surface;

    wherein the lower surface includes a lower vacuum sealing surface located on the lower outer portion; and

    wherein the upper outer portion includes inner and outer upper vacuum sealing surfaces defining the annular zone.

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