Methods of forming vertical transistor devices with different effective gate lengths
First Claim
1. A method comprising:
- forming a first and a second vertically-oriented channel semiconductor structure for, respectively, a first and a second vertical transistor device above a semiconductor substrate;
forming a first and a second top spacer, respectively, around said first and second vertically-oriented channel semiconductor structures, said first and second top spacers having, respectively, a first and a second spacer thickness, wherein said first spacer thickness is greater than said second spacer thickness;
performing at least one epitaxial deposition process to form;
a first doped top source/drain structure around said first vertically-oriented channel semiconductor structure and above said first top spacer; and
a second doped top source/drain structure around said second vertically-oriented channel semiconductor structure and above said second top spacer; and
performing an anneal process so as to cause;
dopant atoms in said first doped top source/drain structure to migrate into said first vertically-oriented channel semiconductor structure; and
dopant atoms in said second doped top source/drain structure to migrate into said second vertically-oriented channel semiconductor structure.
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Abstract
One illustrative method disclosed herein includes, among other things, forming first and second vertically-oriented channel (VOC) semiconductor structures for, respectively, first and second vertical transistor devices, and forming first and second top spacers, respectively, around the first and second VOC structures, wherein the first spacer thickness is greater than the second spacer thickness. In this example, the method also includes performing at least one epitaxial deposition process to form a first top source/drain structure around the first VOC structure and above the first top spacer and a second top source/drain structure around the second VOC structure and above the second top spacer, and performing an anneal process so as to cause dopants in the first and second doped top source/drain structures to migrate into, respectively, the first and second VOC structures.
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Citations
20 Claims
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1. A method comprising:
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forming a first and a second vertically-oriented channel semiconductor structure for, respectively, a first and a second vertical transistor device above a semiconductor substrate; forming a first and a second top spacer, respectively, around said first and second vertically-oriented channel semiconductor structures, said first and second top spacers having, respectively, a first and a second spacer thickness, wherein said first spacer thickness is greater than said second spacer thickness; performing at least one epitaxial deposition process to form; a first doped top source/drain structure around said first vertically-oriented channel semiconductor structure and above said first top spacer; and a second doped top source/drain structure around said second vertically-oriented channel semiconductor structure and above said second top spacer; and performing an anneal process so as to cause; dopant atoms in said first doped top source/drain structure to migrate into said first vertically-oriented channel semiconductor structure; and dopant atoms in said second doped top source/drain structure to migrate into said second vertically-oriented channel semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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forming a first and a second vertically-oriented channel semiconductor structure for, respectively, a first and a second vertical transistor device above a semiconductor substrate; performing a first deposition process to form a first layer of top spacer material comprising a first spacer material for both said first and second vertical transistor devices; performing a second deposition process to form a second layer of top spacer material comprising a second spacer material on said first layer of top spacer material, wherein said second spacer material is a different material than said first spacer material; forming a patterned etch mask above said second layer of top spacer material that exposes a portion of said second layer of top spacer material; performing a selective etching process through said patterned etch mask to selectively remove said exposed portion of said second layer of top spacer material relative to said first layer of top spacer material so as to define; a first top spacer with a first spacer thickness that is positioned around said first vertically-oriented channel semiconductor structure, said first top spacer comprising said first layer of top spacer material and said second layer of top spacer material; and a second top spacer with a second spacer thickness that is positioned around said second vertically-oriented channel semiconductor, wherein said second top spacer comprises said first layer of top spacer material and wherein said first spacer thickness is greater than said second spacer thickness; performing at least one epitaxial deposition process to form; a first doped top source/drain structure around said first vertically-oriented channel semiconductor structure and above said first top spacer; and a second doped top source/drain structure around said second vertically-oriented channel semiconductor structure and above said second top spacer; and performing an anneal process so as to cause; dopant atoms in said first doped top source/drain structure to migrate into said first vertically-oriented channel semiconductor structure; and dopant atoms in said second doped top source/drain structure to migrate into said second vertically-oriented channel semiconductor structure. - View Dependent Claims (14, 15, 16)
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17. A method comprising:
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forming a first and a second vertically-oriented channel semiconductor structure for, respectively, a first and a second vertical transistor device above a semiconductor substrate; forming a first and a second top spacer, respectively, around said first and second vertically-oriented channel semiconductor structures, said first and second top spacers having, respectively, a first and a second spacer thickness, wherein said first spacer thickness is about 1-6 nm greater than said second spacer thickness; performing at least one epitaxial deposition process to form; a first doped top source/drain structure around said first vertically-oriented channel semiconductor structure and above said first top spacer; and a second doped top source/drain structure around said second vertically-oriented channel semiconductor structure and above said second top spacer; and performing an anneal process so as to cause; dopant atoms in said first doped top source/drain structure to migrate into said first vertically-oriented channel semiconductor structure such that said first vertical transistor device has a first effective channel length; and dopant atoms in said second doped top source/drain structure to migrate into said second vertically-oriented channel semiconductor structure such that said second vertical transistor device has a second effective channel length that is about 1-6 nm less than said first effective channel length. - View Dependent Claims (18, 19, 20)
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Specification