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Method for forming semiconductor structure

  • US 9,935,024 B2
  • Filed: 10/07/2016
  • Issued: 04/03/2018
  • Est. Priority Date: 04/28/2016
  • Status: Active Grant
First Claim
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1. A method for forming the semiconductor device structure, comprising:

  • forming a plurality of dies over a first substrate of a first wafer;

    forming a conductive structure over one of the dies, wherein the conductive structure defines a curved top surface;

    forming a solder material on the conductive structure;

    performing a functional test on the conductive structure through the solder material; and

    removing the solder material by an etching process, such that the curved top surface of the conductive structure remains on the conductive structure after the etching process.

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