Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

• US 9,935,258 B2
• Filed: 01/13/2016
• Issued: 04/03/2018
• Est. Priority Date: 09/22/2011
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Chen, Wei-Chuan, Lee, Kangho, Zhu, Xiaochun, Kang, Seung H.
• Primary Examiner(s): BERNSTEIN, ALLISON
• Application Number:
  US14/994,212
• Publication Number:
  US 20160126453A1
• Time in Patent Office: 811 Days
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Claims

1. A magnetic tunnel junction (MTJ) comprising:

a reference layer;

a composite perpendicular magnetic anisotropy (PMA) layer including a PMA free layer, a PMA assist layer, and a PMA coupling layer between the PMA free layer and the PMA assist layer, the PMA coupling layer abutting the PMA free layer and the PMA assist layer and comprising a thin-metal layer of hafnium or a thin-insulator layer of hafnium oxide, in which a material layer of the PMA free layer is different from a material layer of the PMA assist layer;

a tunnel barrier layer between the reference layer and the composite PMA layer;

a longitudinal magnetic anisotropy (LMA) free layer between the tunnel barrier layer and the composite PMA layer, in which the LMA free layer comprises an LMA composite different from the material layer of the PMA free layer and/or the material layer of the PMA assist layer;

a spacer layer between the free layer and the composite PMA layer;

a PMA promotion layer coupled to the composite PMA layer, the PMA promotion layer abutting the PMA assist layer; and

a hard mask layer abutting the PMA promotion layer.

2. The MTJ of claim 1, in which the PMA free layer or the PMA assist layer is CoFeB.

3. The MTJ of claim 2, in which at least one of the PMA free layer and the PMA assist layer comprises a thickness of about less than 20 Å

.

4. The MTJ of claim 1, in which the PMA free layer or the PMA assist layer comprises a thermal stability enhancement layer.

5. The MTJ of claim 1, in which the reference layer comprises a PMA reference layer.

6. The MTJ of claim 1, in which the reference layer comprises a longitudinal magnetic anisotropy (LMA) reference layer.

7. The MTJ of claim 1, integrated in at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

8. The MTJ of claim 1, in which the PMA promotion layer comprises at least one of MgO, AlOx, Ru/MgO, Ta/MgO, AlOx/MgO, MgO/AlOx, Cr, Cr/MgO, Pd, Pd/MgO, Pt, or Pt/MgO.

9. A method of constructing a perpendicular MTJ, comprising:

depositing a reference layer;

depositing a composite perpendicular magnetic anisotropy (PMA) layer including a PMA free layer, a PMA assist layer, and a PMA coupling layer between the PMA free layer and the PMA assist layer, the PMA coupling layer abutting the PMA free layer and the PMA assist layer and comprising a thin-metal layer of hafnium or a thin-insulator layer of hafnium oxide, in which a material layer of the PMA free layer is different from a material layer of the PMA assist layer;

depositing a tunnel barrier layer between the reference layer and the composite PMA layer;

depositing a longitudinal magnetic anisotropy (LMA) free layer between the tunnel barrier layer and the composite PMA layer, in which the LMA free layer comprises an LMA composite different from the material layer of the PMA free layer and/or the material layer of the PMA assist layer;

depositing a spacer layer between the free layer and the composite PMA layer;

depositing a PMA promotion layer on the composite PMA layer, the PMA promotion layer abutting the PMA assist layer; and

depositing a hard mask layer on the PMA promotion layer, the hard mask layer abutting the PMA promotion layer.

10. The method of claim 9, further comprising integrating the MTJ into at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

11. The method of claim 9, in which the PMA promotion layer comprises at least one of MgO, AlOx, Ru/MgO, Ta/MgO, AlOx/MgO, MgO/AlOx, Cr, Cr/MgO, Pd, Pd/MgO, Pt, or Pt/MgO.

12. A magnetic tunnel junction (MTJ) comprising:

means for fixing magnetization;

means for providing tunneling magnetoresistance (TMR); and

a composite perpendicular magnetic anisotropy (PMA) layer, including a PMA coupling layer, the PMA coupling layer disposed between a PMA assist layer and a PMA free layer, the PMA coupling layer abutting the PMA assist layer and the PMA free layer and comprising a thin-metal layer of hafnium or a thin-insulator layer of hafnium oxide, in which a material layer of the PMA free layer is different from a material layer of the PMA assist layer;

the means for providing tunneling magnetoresistance between the means for fixing magnetization and the composite PMA layer;

a longitudinal magnetic anisotropy (LMA) free layer between the means for providing tunneling magnetoresistance and the composite PMA layer, in which the LMA free layer comprises an LMA composite different from the material layer of the PMA free layer and/or the material layer of the PMA assist layer;

means for spacing between the free layer and the composite PMA layer;

means for promoting PMA on the composite PMA layer, the PMA promoting means abutting the PMA assist layer; and

a hard mask layer on the PMA promoting means, the hard mask layer abutting the PMA promoting means.

13. The MTJ of claim 12, in which the PMA assist layer or the PMA free layer comprises CoFeB.

14. The MTJ of claim 12, in which at least one of the PMA assist layer and the PMA free layer comprises a thickness of about less than 20 Å

.

15. The MTJ of claim 12, in which the PMA assist layer or the PMA free layer comprises a thermal stability enhancement layer.

16. The MTJ of claim 12, in which the means for fixing magnetization comprises a PMA reference layer.

17. The MTJ of claim 12, integrated in at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

18. The MTJ of claim 12, in which the PMA promoting means comprises at least one of MgO, AlOx, AlOx/MgO, MgO/AlOx, Cr, Cr/MgO, Pd, Pd/MgO, Pt, or Pt/MgO.