Vertical cavity light-emitting element and method for manufacturing the same

• US 9,935,427 B2
• Filed: 04/17/2017
• Issued: 04/03/2018
• Est. Priority Date: 04/18/2016
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Tazawa, Komei, Liang, Ji-Hao, Kobayashi, Seiichiro
• Primary Examiner(s): Park, Kinam
• Application Number:
  US15/488,539
• Publication Number:
  US 20170302057A1
• Time in Patent Office: 351 Days
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode. At least one of a portion of the transparent electrode corresponding to the opening and a portion of the second-conductivity-type semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening.

Claims

1. A vertical cavity light-emitting element comprising:

a first reflector formed on a substrate;

a semiconductor structure layer formed on the first reflector, the semiconductor structure layer including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type;

an insulating current confinement layer formed on the second semiconductor layer;

a through opening formed in the current confinement layer so as to pass through the current confinement layer;

a transparent electrode covering the through opening and the current confinement layer, the transparent electrode being in contact with the second semiconductor layer via the through opening; and

a second reflector formed on the transparent electrode, wherein

at least one of a portion of the transparent electrode corresponding to the opening and a portion of the second semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening, and

the first resistive region has a resistance value higher than that of the second resistive region.

2. The vertical cavity light-emitting element according to claim 1, wherein the first resistive region is formed in an annular shape along the inner circumference of the through opening.

3. The vertical cavity light-emitting element according to claim 1, wherein the first resistive region in the portion of the transparent electrode corresponding to the opening includes a plurality of islands formed on the second semiconductor layer, and the islands each comprise a dielectric having transparency to light.

4. The vertical cavity light-emitting element according to claim 1, wherein an average thickness of the first resistive region in the portion of the transparent electrode corresponding to the opening is smaller than an average thickness of the second resistive region.

5. The vertical cavity light-emitting element according to claim 4, wherein a thickness of the second resistive region in the portion of the transparent electrode corresponding to the opening is constant, and a thickness of the first resistive region is continuously reduced toward an edge of the through opening.

6. The vertical cavity light-emitting element according to claim 1, wherein the first resistive region in the portion of the second semiconductor layer corresponding the opening is a component atom vacancy region where a component atom in the second semiconductor layer is deficient as compared to the second resistive region.

7. A method for manufacturing a vertical cavity light-emitting element, comprising the steps of:

forming a first reflector on a substrate;

forming a semiconductor structure layer including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type on the first reflector;

forming an insulating current confinement layer on the second semiconductor layer;

forming a through opening in the current confinement layer so as to pass through the current confinement layer;

forming a transparent electrode so as to cover the through opening and the current confinement layer and to be in contact with the second semiconductor layer via the through opening; and

forming a second reflector on the transparent electrode, wherein

between the step of forming the through opening in the current confinement layer and the step of forming the transparent electrode, the method comprises a step of forming a protective pattern so as to cover a central part of the second semiconductor layer being exposed in the through opening and performing plasma treatment on an exposed part of the second semiconductor layer around the central part, to thereby form a first resistive region so as to be disposed along an inner circumference of the through opening and form a second resistive region so as to be disposed on a center region of the through opening and have a resistance value smaller than a resistance value of the first resistive region in a portion of the second semiconductor layer corresponding to the opening.