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Radio-frequency switch having dynamic gate bias resistance, body contact, and compensation circuit

  • US 9,935,627 B2
  • Filed: 03/13/2017
  • Issued: 04/03/2018
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
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1. A radio-frequency (RF) switch comprising:

  • a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor;

    a switchable resistive coupling circuit connected to each of the respective gates;

    a switchable resistive grounding circuit connected to each of the respective bodies; and

    a compensation circuit connected at a first end to both the source of the first field-effect transistor and the drain of the second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors.

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