Radio-frequency switch having dynamic gate bias resistance, body contact, and compensation circuit
First Claim
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1. A radio-frequency (RF) switch comprising:
- a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor;
a switchable resistive coupling circuit connected to each of the respective gates;
a switchable resistive grounding circuit connected to each of the respective bodies; and
a compensation circuit connected at a first end to both the source of the first field-effect transistor and the drain of the second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors.
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Abstract
Radio-frequency (RF) switch circuits having switchable transistor coupling for improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between first and second nodes, each FET having a gate and body. A switchable resistive coupling circuit is connected to each of the respective gates. A switchable resistive grounding circuit is connected to each of the respective bodies. The RF switch system also includes a compensation circuit to compensate a non-linearity effect generated by at least one of the field-effect transistors.
3 Citations
20 Claims
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1. A radio-frequency (RF) switch comprising:
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a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor; a switchable resistive coupling circuit connected to each of the respective gates; a switchable resistive grounding circuit connected to each of the respective bodies; and a compensation circuit connected at a first end to both the source of the first field-effect transistor and the drain of the second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor die comprising:
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a semiconductor substrate; a plurality of field-effect transistors (FETs) formed on the semiconductor substrate, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor; a coupling circuit including a switchable resistive circuit connected to a respective gate of each of the plurality of field-effect transistors, the coupling circuit further including a switchable resistive grounding circuit connected to a respective body of each of the plurality of field-effect transistors; and a compensation circuit connected at a first end to both the source of a first field-effect transistor and the drain of a second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors. - View Dependent Claims (15, 16)
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17. A radio-frequency (RF) switch module comprising:
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a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the die including a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor; a coupling circuit including a switchable resistive circuit connected to a respective gate of each of the plurality of field-effect transistors, the coupling circuit further including a switchable resistive grounding circuit connected to a respective body of each of the plurality of field-effect transistors; and a compensation circuit connected at a first end to both the source of a first field-effect transistor and the drain of a second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors. - View Dependent Claims (18, 19, 20)
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Specification