Organosilane precursors for ALD/CVD silicon-containing film applications

• US 9,938,303 B2
• Filed: 07/19/2013
• Issued: 04/10/2018
• Est. Priority Date: 07/20/2012
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Dussarrat, Christian, Kuchenbeiser, Glenn, Pallem, Venkateswara R.
• Primary Examiner(s): Wieczorek, Michael P
• Assistant Examiner(s): Miller, Michael G
• Application Number:
  US14/415,657
• Publication Number:
  US 20150166577A1
• Time in Patent Office: 1,726 Days
• Field of Search: 556464
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium

Abstract

Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Claims

1. A method of depositing a Si-containing layer on a substrate, the method comprising:

introducing at least one Si-containing thin film forming precursor into a reactor having at least one substrate disposed therein, the Si-containing film forming precursor having the following formula;

2. The method of claim 1, further comprising introducing into the reactor at least one co-reactant.

3. The method of claim 2, wherein the co-reactant is selected from the group consisting of O₂, O₃, H₂O, H₂O₂, NO, NO₂, a carboxylic acid, radicals thereof, and combinations thereof.

4. The method of claim 2, wherein the co-reactant is selected from the group consisting of H₂, NH₃, (SiH₃)₃N, hydridosilanes, chlorosilanes and chloropolysilanes, alkylsilanes, hydrazines, organic amines, pyrazoline, pyridine, B-containing molecules, alkyl metals, radical species thereof, and mixtures thereof.

5. The method of claim 4, wherein the co-reactant is selected from the group consisting of H₂, NH₃ , SiH₄, Si₂H₆, Si₃H₈, SiH₂Me₂, SiH₂Et₂, N(SiH₃)₃, hydrogen radicals thereof, and mixtures thereof.

6. The method of claim 4, wherein the co-reactant is selected from the group consisting of SiHCl₃, Si₂Cl₆, Si₂HCl₅, Si₂H₂Cl₄ , and cyclo-Si₆H₆Cl₆.

7. The method of claim 1, wherein the Si-containing film forming precursor has the following formula:

8. The method of claim 7, wherein the Si-containing thin film forming precursor is H₃Si(—

O═

C(tBu)-CH═

C(tBu)-O—

) or H₃Si(O═

C(Me)-CH═

C(Me)-O—

).

9. The method of claim 1, wherein the Si-containing film forming precursor has the following formula:

10. The method of claim 9, wherein the Si-containing thin film forming precursor is H₃Si(—

O(iPr)-C₃H₆—

O—

) or H₃Si(—

O(tBu)-C₃H₆—

O—

).

11. The method of claim 1, wherein the Si-containing film forming precursor has the following formula:

12. The method of claim 11, wherein the Si-containing thin film forming precursor is H₃Si(—

O═

C(tBu)-CH₂—

O—

).

13. The method of claim 1, wherein the Si-containing film forming precursor has the following formula:

14. The method of claim 13, wherein the Si-containing thin film forming precursor is H₃Si(—

O(iPr)-C₂H₄—

O—

) or H₃Si(—

O(tBu-C₂H₄—

O—

).

15. The method of claim 1, wherein the Si-containing film forming precursor has the following formula:

16. The method of claim 15, wherein the Si-containing thin film forming precursor is H₃Si(—

O—

C(Et)-O—

) or H₃Si(—

O—

C(nBu)-O—

).