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Sequential circuit and semiconductor device

  • US 9,939,692 B2
  • Filed: 11/07/2016
  • Issued: 04/10/2018
  • Est. Priority Date: 06/05/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a driver circuit comprising;

    a first transistor comprising;

    a first gate electrode;

    a semiconductor film over the first gate electrode;

    an insulating film over the semiconductor film;

    a nitride insulating film over the insulating film; and

    a second gate electrode over the nitride insulating film; and

    a second transistor;

    a pixel portion comprising;

    a capacitor comprising;

    a first transparent conductive film;

    the nitride insulating film over and in contact with the first transparent conductive film; and

    a second transparent conductive film over the nitride insulating film,a third transistor; and

    a liquid crystal element comprising;

    the first transparent conductive film electrically connected to the third transistor;

    a liquid crystal layer over the first transparent conductive film; and

    a first conductive film over the liquid crystal layer,wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the first transistor.

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