Sequential circuit and semiconductor device
First Claim
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1. A semiconductor device comprising:
- a driver circuit comprising;
a first transistor comprising;
a first gate electrode;
a semiconductor film over the first gate electrode;
an insulating film over the semiconductor film;
a nitride insulating film over the insulating film; and
a second gate electrode over the nitride insulating film; and
a second transistor;
a pixel portion comprising;
a capacitor comprising;
a first transparent conductive film;
the nitride insulating film over and in contact with the first transparent conductive film; and
a second transparent conductive film over the nitride insulating film,a third transistor; and
a liquid crystal element comprising;
the first transparent conductive film electrically connected to the third transistor;
a liquid crystal layer over the first transparent conductive film; and
a first conductive film over the liquid crystal layer,wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the first transistor.
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Abstract
The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a driver circuit comprising; a first transistor comprising; a first gate electrode; a semiconductor film over the first gate electrode; an insulating film over the semiconductor film; a nitride insulating film over the insulating film; and a second gate electrode over the nitride insulating film; and a second transistor; a pixel portion comprising; a capacitor comprising; a first transparent conductive film; the nitride insulating film over and in contact with the first transparent conductive film; and a second transparent conductive film over the nitride insulating film, a third transistor; and a liquid crystal element comprising; the first transparent conductive film electrically connected to the third transistor; a liquid crystal layer over the first transparent conductive film; and a first conductive film over the liquid crystal layer, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the first transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 21)
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11. A semiconductor device comprising:
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a driver circuit comprising; a first transistor comprising; a first gate electrode; a semiconductor film over the first gate electrode; an insulating film over the semiconductor film; a nitride insulating film over the insulating film; and a second gate electrode over the nitride insulating film; and a second transistor; a pixel portion comprising; a capacitor comprising; a first transparent conductive film; the nitride insulating film over and in contact with the first transparent conductive film; and a second transparent conductive film over the nitride insulating film, a third transistor; and a liquid crystal element comprising; the first transparent conductive film electrically connected to the third transistor; a liquid crystal layer over the first transparent conductive film; and a first conductive film over the liquid crystal layer, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the first transistor, and wherein the first gate electrode of the first transistor is electrically connected to the second gate electrode of the first transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 22)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Miyake, Hiroyuki, Toyotaka, Kouhei, Hayakawa, Masahiko, Matsubayashi, Daisuke, Matsuda, Shinpei
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Primary Examiner(s)Nguyen, Sang V
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Application NumberUS15/344,795Publication NumberTime in Patent Office519 DaysField of SearchUS Class CurrentCPC Class CodesG02F 1/133345 Insulating layers G02F1/133...G02F 1/1343 Electrodes reflective elect...G02F 1/134309 characterised by their geom...G02F 1/136213 Storage capacitors associat...G02F 1/13624 having more than one switch...G02F 1/1368 in which the switching elem...G02F 1/13685 Top gatesH01L 27/1225 with semiconductor material...H01L 27/127 with a particular formation...H01L 29/78648 arranged on opposing sides ...H01L 29/7869 having a semiconductor body...H01L 29/78696 characterised by the struct...
