Memory device configuration commands
First Claim
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1. A method for configuring a memory device, comprising:
- executing a first command while the memory device is in a ready state to configure the memory device to a particular mode, wherein the particular mode defines number of bits stored per memory cell; and
executing a second command to perform a first operation while the memory device is in the particular mode.
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Abstract
Apparatuses and methods for configuring a memory device using configuration commands are provided. A method can include executing a first command while the memory device is in a ready state to configure the memory device to a particular mode and executing a second command to perform a first operation while the memory device is in the particular mode.
Accordingly, Applicant respectfully requests withdrawal of the objection to the Abstract of the application.
15 Citations
27 Claims
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1. A method for configuring a memory device, comprising:
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executing a first command while the memory device is in a ready state to configure the memory device to a particular mode, wherein the particular mode defines number of bits stored per memory cell; and executing a second command to perform a first operation while the memory device is in the particular mode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for configuring a memory device, comprising:
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sending a command to the memory device, wherein the command includes instructions to configure the memory device to a particular mode and the particular mode defines a particular programming algorithm; and configuring the memory device to the particular mode by executing the command while the memory device is in a ready state and without a data transfer phase. - View Dependent Claims (9, 10, 11, 12)
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13. A method for configuring a memory device, comprising:
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executing a first command to configure the memory device to a first mode, wherein the first mode defines a first number of bits stored per memory cell; executing a second command to perform a first operation on a first logical unit (LUN) of the memory device while the memory device is in the first mode; executing a third command to configure the memory device to a second mode, wherein the second mode defines a second number of bits stored per memory cell; and executing a fourth command to perform a second operation on a second logical unit (LUN) of the memory device while the memory device is in the second mode. - View Dependent Claims (14, 15, 16, 17, 18)
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19. An apparatus, comprising:
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an array of memory cells; and a controller coupled to the array of memory cells, the controller configured to; execute a command to configure the memory device to a particular mode while the memory device is in a ready state, wherein executing the command does not include a data transfer phase and the particular mode defines a particular programming algorithm. - View Dependent Claims (20, 21, 22)
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23. An apparatus, comprising:
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an array of memory cells; and a controller coupled to the array of memory cells, the controller configured to; execute a first command to configure the memory device to a particular mode while the memory device is in a ready state, wherein the particular mode defines number of bits stored per memory cell; and execute a second command to perform an operation while the memory device is in the particular mode. - View Dependent Claims (24, 25, 26, 27)
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Specification