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STT-MRAM cell structures

  • US 9,940,989 B2
  • Filed: 01/31/2017
  • Issued: 04/10/2018
  • Est. Priority Date: 01/09/2009
  • Status: Active Grant
First Claim
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1. A method of operating a memory cell comprising:

  • directing a programming current through a free layer in the memory cell such that a cross sectional area of the programming current through the free layer is smaller than the cross section of the memory cell; and

    programming the memory cell.

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