Memory array with one shared deep doped region
First Claim
1. A memory array comprising:
- a plurality of memory pages, each memory page comprising a plurality of memory cells, and each memory cell comprising;
a floating gate module comprising a floating gate transistor, and configured to control the floating gate transistor according to a source line, a bit line and a word line, the floating gate transistor having a first terminal, a second terminal and a floating gate;
a control element having a body terminal coupled to a control line, a first terminal coupled to the body terminal, a second terminal coupled to the body terminal, and a control terminal coupled to the floating gate; and
an erase element having a body terminal configured to receive a first voltage during a program operation and a program inhibit of the memory cell and receive a second voltage during an erase operation of the memory cell, a first terminal coupled to an erase line, a second terminal coupled to the first terminal of the erase element or being floating, and a control terminal coupled to the floating gate;
wherein;
the floating gate module is disposed in a first well;
the erase element is disposed in a second well;
the control element is disposed in a third well;
the first well, the second well and the third well are disposed in a deep doped region;
memory cells of the plurality of memory pages are all disposed in the deep doped region;
the control line is at the first voltage during the program operation;
the erase line is at the second voltage during the erase operation; and
control elements of the memory cells in a same memory page are disposed in the same third well.
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Accused Products
Abstract
A memory array includes a plurality of memory pages, each memory page includes a plurality of memory cells, and each memory cell includes a floating gate module, a control element, and an erase element. The floating gate module is disposed in a first well, the erase element is disposed in a second well, and the control element is disposed in a third well. The first well, the second well and the third well are disposed in a deep doped region, and memory cells of the plurality of memory pages are all disposed in the deep doped region. Therefore, the spacing rule between deep doped regions is no longer be used to limit the circuit area of the memory array and the circuit area of the memory array can be reduced.
16 Citations
4 Claims
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1. A memory array comprising:
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a plurality of memory pages, each memory page comprising a plurality of memory cells, and each memory cell comprising; a floating gate module comprising a floating gate transistor, and configured to control the floating gate transistor according to a source line, a bit line and a word line, the floating gate transistor having a first terminal, a second terminal and a floating gate; a control element having a body terminal coupled to a control line, a first terminal coupled to the body terminal, a second terminal coupled to the body terminal, and a control terminal coupled to the floating gate; and an erase element having a body terminal configured to receive a first voltage during a program operation and a program inhibit of the memory cell and receive a second voltage during an erase operation of the memory cell, a first terminal coupled to an erase line, a second terminal coupled to the first terminal of the erase element or being floating, and a control terminal coupled to the floating gate; wherein; the floating gate module is disposed in a first well; the erase element is disposed in a second well; the control element is disposed in a third well; the first well, the second well and the third well are disposed in a deep doped region; memory cells of the plurality of memory pages are all disposed in the deep doped region; the control line is at the first voltage during the program operation; the erase line is at the second voltage during the erase operation; and control elements of the memory cells in a same memory page are disposed in the same third well. - View Dependent Claims (2, 3, 4)
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Specification