Microwave plasma device
First Claim
1. A plasma processing system, comprising:
- a plasma chamber comprising a plasma processing region that can support a semiconductor substrate;
a power transmission element comprising;
(i) a first interior cavity to propagate electromagnetic waves,(ii) an annular continuous slit along one side of the power transmission element, the annular continuous slit forming an annular continuous opening between the first interior cavity and an exterior surface of the power transmission element,(iii) a first power feed opening of the first interior cavity to receive the electromagnetic waves, and(iv) a first power distribution element disposed within the first interior cavity and opposite the power feed opening and the annular continuous slit, the first power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the first interior cavity;
a microwave power source that can provide the electromagnetic waves to the power transmission element;
a dielectric component arranged to cover at least a portion of the annular continuous slit and to transmit at least a portion of energy from the electromagnetic waves through the annular continuous opening;
the plasma processing region disposed adjacent to the power transmission element; and
a microwave plasma source disposed above the plasma chamber and opposite the plasma processing region, the microwave plasma source including;
(i) a second power feed opening that is in electrical communication with the microwave power source to receive the electromagnetic waves, and(ii) a microwave cavity disposed above the plasma processing region, the microwave cavity including;
(a) an enclosure that enables the propagation of the electromagnetic waves and is fluidically isolated from the plasma processing region, and(b) a plurality of cylindrical dielectric poles that each (1) are positioned within the enclosure and extend from the enclosure to a position in the plasma processing region above the dielectric component, (2) propagate energy from the enclosure to the plasma processing region, and (3) have a diameter that is less than or equal to ¼
of the wavelength of the electromagnetic waves.
1 Assignment
0 Petitions
Accused Products
Abstract
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
20 Citations
14 Claims
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1. A plasma processing system, comprising:
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a plasma chamber comprising a plasma processing region that can support a semiconductor substrate; a power transmission element comprising; (i) a first interior cavity to propagate electromagnetic waves, (ii) an annular continuous slit along one side of the power transmission element, the annular continuous slit forming an annular continuous opening between the first interior cavity and an exterior surface of the power transmission element, (iii) a first power feed opening of the first interior cavity to receive the electromagnetic waves, and (iv) a first power distribution element disposed within the first interior cavity and opposite the power feed opening and the annular continuous slit, the first power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the first interior cavity; a microwave power source that can provide the electromagnetic waves to the power transmission element; a dielectric component arranged to cover at least a portion of the annular continuous slit and to transmit at least a portion of energy from the electromagnetic waves through the annular continuous opening; the plasma processing region disposed adjacent to the power transmission element; and a microwave plasma source disposed above the plasma chamber and opposite the plasma processing region, the microwave plasma source including; (i) a second power feed opening that is in electrical communication with the microwave power source to receive the electromagnetic waves, and (ii) a microwave cavity disposed above the plasma processing region, the microwave cavity including; (a) an enclosure that enables the propagation of the electromagnetic waves and is fluidically isolated from the plasma processing region, and (b) a plurality of cylindrical dielectric poles that each (1) are positioned within the enclosure and extend from the enclosure to a position in the plasma processing region above the dielectric component, (2) propagate energy from the enclosure to the plasma processing region, and (3) have a diameter that is less than or equal to ¼
of the wavelength of the electromagnetic waves. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification