Method of manufacturing a semiconductor device
First Claim
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1. A method of making a semiconductor device comprising:
- forming a first opening in an insulating layer, wherein the first opening has a width and a length;
forming a second opening in the insulating layer, wherein the second opening has a width less than the length of the first opening, and is electrically connected to the first opening;
forming a third opening in the insulating layer, wherein the third opening has a width less than the width of the second opening, and is electrically connected to the second opening, and forming the first opening comprises forming the first opening simultaneously with forming the third opening; and
filling the first opening, the second opening and the third opening with a conductive material.
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Abstract
A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.
13 Citations
20 Claims
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1. A method of making a semiconductor device comprising:
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forming a first opening in an insulating layer, wherein the first opening has a width and a length; forming a second opening in the insulating layer, wherein the second opening has a width less than the length of the first opening, and is electrically connected to the first opening; forming a third opening in the insulating layer, wherein the third opening has a width less than the width of the second opening, and is electrically connected to the second opening, and forming the first opening comprises forming the first opening simultaneously with forming the third opening; and filling the first opening, the second opening and the third opening with a conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of making a semiconductor device comprising:
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forming an opening in a first insulating layer, wherein the opening comprises a first section having a first width and a first length, a second section having a second width, and a third section having a third width, and the third width is less than the second width; filling the opening with a conductive material; depositing a second insulating layer over the first insulating layer and over the conductive material; and forming a first via in the second insulating layer, wherein the first via lands on the conductive material in the third section. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of making a semiconductor device comprising:
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generating a first interconnect layout pattern, wherein the interconnect layout pattern comprises a first section having a first width and a first length, a second section having a second width a, and a third section having a third width, and the third width is less than the second width forming an opening in a first insulating layer based on the first interconnect layout pattern, wherein forming the opening comprises simultaneously forming portions of the opening corresponding to the first section and the third section; and filling the opening in the first insulating layer with a first conductive material. - View Dependent Claims (17, 18, 19, 20)
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Specification