Interconnection structures for semiconductor devices and methods of fabricating the same
First Claim
1. An interconnection structure of a semiconductor device, comprising:
- an underlying layer including a lower interconnection;
an interlayered dielectric layer on a surface of the underlying layer, the interlayered dielectric layer comprising stacked dielectric layers including a contact hole and a trench in the stacked dielectric layers, the contact hole exposing a portion of the lower interconnection, and the trench extending along a first direction parallel to the surface of the underlying layer, wherein the trench is directly connected to the contact hole;
a contact plug in the contact hole of the interlayered dielectric layer, the contact plug comprising a unitary member having lower and upper portions, wherein a first upper width of the upper portion in the first direction is greater than a second upper width thereof in a second direction perpendicular to the first direction such that the upper portion has an elliptical cross-section in plan view, and wherein first and second lower widths of the lower portion in the first and second directions are substantially same such that the lower portion has a substantially circular cross-section in plan view; and
an upper interconnection line in the trench of the interlayered dielectric layer and connected to the contact plug, wherein a width of the trench in the second direction is greater than the second upper width of the upper portion of the contact plug at an interface between the contact plug and the upper interconnection line adjacent a bottom surface of the trench, wherein the lower and upper portions of the contact plug include lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and wherein the second angle is less than the first angle, andwherein the unitary member of the contact plug comprises a first metal material, and the upper interconnection line comprises a second metal material of which a melting point is lower than that of the first metal material.
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Accused Products
Abstract
An interconnection structure includes an underlying layer including a lower interconnection, and an interlayered dielectric layer including a contact hole and a trench therein. The contact hole exposes a portion of the lower interconnection, and the trench extends along a first direction to be connected to the contact hole. A contact plug extends through the contact hole in the interlayered dielectric layer, and an upper interconnection line extends in the trench of the interlayered dielectric layer and connects to the contact plug. The contact plug includes lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and the second angle is less than the first angle. Related devices and fabrication methods are also discussed.
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Citations
22 Claims
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1. An interconnection structure of a semiconductor device, comprising:
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an underlying layer including a lower interconnection; an interlayered dielectric layer on a surface of the underlying layer, the interlayered dielectric layer comprising stacked dielectric layers including a contact hole and a trench in the stacked dielectric layers, the contact hole exposing a portion of the lower interconnection, and the trench extending along a first direction parallel to the surface of the underlying layer, wherein the trench is directly connected to the contact hole; a contact plug in the contact hole of the interlayered dielectric layer, the contact plug comprising a unitary member having lower and upper portions, wherein a first upper width of the upper portion in the first direction is greater than a second upper width thereof in a second direction perpendicular to the first direction such that the upper portion has an elliptical cross-section in plan view, and wherein first and second lower widths of the lower portion in the first and second directions are substantially same such that the lower portion has a substantially circular cross-section in plan view; and an upper interconnection line in the trench of the interlayered dielectric layer and connected to the contact plug, wherein a width of the trench in the second direction is greater than the second upper width of the upper portion of the contact plug at an interface between the contact plug and the upper interconnection line adjacent a bottom surface of the trench, wherein the lower and upper portions of the contact plug include lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and wherein the second angle is less than the first angle, and wherein the unitary member of the contact plug comprises a first metal material, and the upper interconnection line comprises a second metal material of which a melting point is lower than that of the first metal material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a semiconductor substrate including a lower interconnection; an interlayered dielectric layer including a contact hole and a trench, the contact hole exposing a portion of the lower interconnection, and the trench extending along a first direction to be connected to the contact hole; a first barrier metal layer on inner surfaces of the contact hole and the trench, the first barrier metal layer being in direct contact with the inner surfaces of the contact hole and the trench; a first metal layer in a portion of the contact hole provided with the first barrier metal layer, wherein the first metal layer is coplanar with or confined below a bottom surface of the trench, and wherein a width of the trench in a second direction perpendicular to the first direction is greater than a width of the contact hole in the second direction at the bottom surface of the trench; a second barrier metal layer in direct contact with the first barrier metal layer at the bottom surface and side surfaces of the trench; and a second metal layer in the trench provided with the second barrier metal layer such that the second barrier metal layer extends along an interface between the first metal layer and the second metal layer at the bottom surface of the trench, wherein an upper portion of the first metal layer adjacent the interface has a first upper width in the first direction and a second upper width in the second direction, wherein the first upper width is greater than the second upper width such that the upper portion has an elliptical cross-section in plan view, wherein a lower portion of the first metal layer opposite the interface has first and second lower widths that are substantially same in the first and second directions such that the lower portion has a substantially circular cross-section in plan view, and wherein the upper and lower portions of the first metal layer are portions of a unitary member. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An interconnection structure, comprising:
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a substrate; an interlayer dielectric layer comprising stacked dielectric layers on the substrate; a conductive plug in a contact hole extending through the stacked dielectric layers of the interlayer dielectric layer toward the substrate, the conductive plug comprising upper and lower sidewalls having different angles of inclination relative to a surface of the substrate; and a conductive line extending along a first direction in a trench in the stacked dielectric layers of the interlayer dielectric layer and contacting the conductive plug opposite the substrate adjacent the upper sidewall, wherein a floor of the trench is spaced apart from a dielectric interface between the stacked dielectric layers of the interlayer dielectric layer, wherein a width of the trench in a second direction perpendicular to the first direction is greater than a width of the conductive plug in the second direction at an interface between the conductive plug and the conductive line adjacent the floor of the trench, and wherein the conductive line comprises a metal having a higher charge mobility than that of the conductive plug, and wherein the conductive plug comprises a unitary member having upper and lower portions adjacent the upper and lower sidewalls, respectively, wherein a dimension of the upper portion along the first direction is greater than a dimension thereof along the second direction such that the upper portion has an elliptical cross-section in plan view, and wherein dimensions of the lower portion along the first and second directions are substantially same such that the lower portion has a substantially circular cross-section in plan view. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification