Interconnection structures for semiconductor devices and methods of fabricating the same

• US 9,941,206 B2
• Filed: 11/22/2013
• Issued: 04/10/2018
• Est. Priority Date: 01/29/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Kang, Minsung
• Primary Examiner(s): Nicely, Joseph C
• Assistant Examiner(s): KOO, LAMONT B
• Application Number:
  US14/087,919
• Publication Number:
  US 20140210087A1
• Time in Patent Office: 1,600 Days
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 2221/1026 the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/532 characterised by the materials
• CPC Class Codes: H01L 23/53233 Copper alloys
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53266 Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 12/09 with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/31 having a storage electrode stacked over the transistor
• CPC Class Codes: H10B 12/50 Peripheral circuit region structures

Abstract

An interconnection structure includes an underlying layer including a lower interconnection, and an interlayered dielectric layer including a contact hole and a trench therein. The contact hole exposes a portion of the lower interconnection, and the trench extends along a first direction to be connected to the contact hole. A contact plug extends through the contact hole in the interlayered dielectric layer, and an upper interconnection line extends in the trench of the interlayered dielectric layer and connects to the contact plug. The contact plug includes lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and the second angle is less than the first angle. Related devices and fabrication methods are also discussed.

Claims

1. An interconnection structure of a semiconductor device, comprising:

an underlying layer including a lower interconnection;

an interlayered dielectric layer on a surface of the underlying layer, the interlayered dielectric layer comprising stacked dielectric layers including a contact hole and a trench in the stacked dielectric layers, the contact hole exposing a portion of the lower interconnection, and the trench extending along a first direction parallel to the surface of the underlying layer, wherein the trench is directly connected to the contact hole;

a contact plug in the contact hole of the interlayered dielectric layer, the contact plug comprising a unitary member having lower and upper portions, wherein a first upper width of the upper portion in the first direction is greater than a second upper width thereof in a second direction perpendicular to the first direction such that the upper portion has an elliptical cross-section in plan view, and wherein first and second lower widths of the lower portion in the first and second directions are substantially same such that the lower portion has a substantially circular cross-section in plan view; and

an upper interconnection line in the trench of the interlayered dielectric layer and connected to the contact plug, wherein a width of the trench in the second direction is greater than the second upper width of the upper portion of the contact plug at an interface between the contact plug and the upper interconnection line adjacent a bottom surface of the trench, wherein the lower and upper portions of the contact plug include lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and wherein the second angle is less than the first angle, and

wherein the unitary member of the contact plug comprises a first metal material, and the upper interconnection line comprises a second metal material of which a melting point is lower than that of the first metal material.

2. The interconnection structure of claim 1, wherein the first and second upper widths define a contact area between the contact plug and the upper interconnection line.

3. The interconnection structure of claim 2, wherein the first upper width of the upper portion of the contact plug in the first direction along the interface is greater than the width of the trench in the second direction along the interface.

4. The interconnection structure of claim 1, wherein the contact plug comprises:

a first barrier metal layer on inner surfaces of the contact hole and the trench, wherein the first metal material is in the contact hole on the first barrier metal layer.

5. The interconnection structure of claim 4, wherein the upper interconnection line comprises:

a second barrier metal layer on side and bottom surfaces of the trench; and

a second metal layer in the trench on the second barrier metal layer,

wherein the second barrier metal layer is in direct contact with the first barrier metal layer at the side and bottom surfaces of the trench, and

wherein the bottom surface of the trench is spaced apart from a dielectric interface between the stacked dielectric layers of the interlayered dielectric layer.

6. The interconnection structure of claim 1, wherein the contact plug comprises tungsten, and wherein the upper interconnection line comprises copper or copper alloy.

7. A semiconductor device, comprising:

a semiconductor substrate including a lower interconnection;

an interlayered dielectric layer including a contact hole and a trench, the contact hole exposing a portion of the lower interconnection, and the trench extending along a first direction to be connected to the contact hole;

a first barrier metal layer on inner surfaces of the contact hole and the trench, the first barrier metal layer being in direct contact with the inner surfaces of the contact hole and the trench;

a first metal layer in a portion of the contact hole provided with the first barrier metal layer, wherein the first metal layer is coplanar with or confined below a bottom surface of the trench, and wherein a width of the trench in a second direction perpendicular to the first direction is greater than a width of the contact hole in the second direction at the bottom surface of the trench;

a second barrier metal layer in direct contact with the first barrier metal layer at the bottom surface and side surfaces of the trench; and

a second metal layer in the trench provided with the second barrier metal layer such that the second barrier metal layer extends along an interface between the first metal layer and the second metal layer at the bottom surface of the trench,

wherein an upper portion of the first metal layer adjacent the interface has a first upper width in the first direction and a second upper width in the second direction, wherein the first upper width is greater than the second upper width such that the upper portion has an elliptical cross-section in plan view, wherein a lower portion of the first metal layer opposite the interface has first and second lower widths that are substantially same in the first and second directions such that the lower portion has a substantially circular cross-section in plan view, and wherein the upper and lower portions of the first metal layer are portions of a unitary member.

8. The device of claim 7, wherein the contact hole comprises lower and upper sidewalls inclined at first and second angles, respectively, relative to a surface of the substrate, and wherein the second angle is less than the first angle.

9. The device of claim 7, wherein the first and second upper widths define a contact area between the first metal layer and the second metal layer.

10. The device of claim 9, wherein the first upper width in the first direction is greater than the width of the trench in the second direction.

11. The device of claim 7, wherein the semiconductor substrate comprises a cell region including data storing elements and a peripheral circuit region including the contact hole and the trench, wherein the interlayered dielectric layer covers the data storing elements of the cell region, and wherein the unitary member extends through the interlayered dielectric layer from adjacent the lower interconnection below the data storing elements and away from the substrate beyond the data storing elements.

12. The device of claim 7, wherein the first metal layer comprises tungsten, and wherein the second metal layer comprises copper or copper alloy.

13. An interconnection structure, comprising:

a substrate;

an interlayer dielectric layer comprising stacked dielectric layers on the substrate;

a conductive plug in a contact hole extending through the stacked dielectric layers of the interlayer dielectric layer toward the substrate, the conductive plug comprising upper and lower sidewalls having different angles of inclination relative to a surface of the substrate; and

a conductive line extending along a first direction in a trench in the stacked dielectric layers of the interlayer dielectric layer and contacting the conductive plug opposite the substrate adjacent the upper sidewall,

wherein a floor of the trench is spaced apart from a dielectric interface between the stacked dielectric layers of the interlayer dielectric layer, wherein a width of the trench in a second direction perpendicular to the first direction is greater than a width of the conductive plug in the second direction at an interface between the conductive plug and the conductive line adjacent the floor of the trench, and wherein the conductive line comprises a metal having a higher charge mobility than that of the conductive plug, and

wherein the conductive plug comprises a unitary member having upper and lower portions adjacent the upper and lower sidewalls, respectively, wherein a dimension of the upper portion along the first direction is greater than a dimension thereof along the second direction such that the upper portion has an elliptical cross-section in plan view, and wherein dimensions of the lower portion along the first and second directions are substantially same such that the lower portion has a substantially circular cross-section in plan view.

14. The structure of claim 13, wherein the lower and upper sidewalls of the conductive plug are inclined at a first angle and a second angle, respectively, relative to the surface of the substrate, and wherein the second angle is less than the first angle.

15. The structure of claim 14, wherein a cross-sectional area of the upper portion of the conductive plug adjacent the upper sidewall thereof and contacting the conductive line at the interface therebetween is greater than a cross-sectional area of the lower portion of the conductive plug adjacent the lower sidewall thereof.

16. The structure of claim 15, wherein the dimension of the upper portion of the conductive plug along the first direction in which the conductive line extends is greater than a dimension of the conductive line along the second direction, wherein the dimensions of the upper portion of the conductive plug along the first and second directions define a contact area at the interface between the conductive plug and the conductive line.

17. The structure of claim 15, wherein a cross-sectional area of a bowed portion of the conductive plug between the upper and lower portions thereof is greater than that of the upper portion thereof.

18. The structure of claim 13, wherein the interlayer dielectric layer comprises at least two dielectric layers, and wherein the conductive line is spaced apart from an interface between the at least two dielectric layers.

19. The structure of claim 13, wherein the substrate comprises a cell region including data storage elements extending through the interlayer dielectric layer thereon and a peripheral circuit region including the conductive plug extending through the interlayer dielectric layer thereon, wherein the data storage elements and the conductive plug contact respective underlying transistors that are between the substrate and the interlayer dielectric layer in the cell region and the peripheral circuit region, and wherein the unitary member extends from the contact with one of the respective underlying transistors in the peripheral circuit region away from the substrate and beyond the data storage elements.

20. The structure of claim 13, further comprising a first barrier metal layer along sidewalls of the contact hole extending through the interlayer dielectric layer to the substrate, wherein the conductive line comprises a second barrier metal layer along sidewalls of the trench in the interlayer dielectric layer opposite the substrate, and wherein the second barrier layer is directly on the first barrier layer along at least a portion of sidewalls and the floor of the trench and extends along the interface between the conductive plug and the conductive line such that a contact area between the conductive plug and the second barrier metal layer is greater than a cross-sectional area of the conductive plug in the contact hole.

21. The structure of claim 20, wherein the unitary member of the conductive plug further comprises a first metal layer that is confined below the second barrier metal layer extending along the interface between the conductive plug and the conductive line at the floor of the trench, and wherein the conductive line comprises a second metal layer different than the first metal layer.

22. The structure of claim 20, wherein the contact hole has an aspect ratio of about 1:

2 to about 1;

10.