Nitridized ruthenium layer for formation of cobalt interconnects
First Claim
1. A method for fabricating an advanced metal conductor structure comprising:
- providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures;
creating an adhesion promoting layer disposed on the patterned dielectric;
depositing a ruthenium metal layer disposed on the adhesion promoting layer;
performing a nitridation process on the ruthenium metal layer to produce a nitridized ruthenium metal layer;
using a physical vapor deposition process to deposit a cobalt layer sufficient to completely fill a remainder portion of the set of features disposed on the nitridized ruthenium metal layer; and
performing a thermal anneal which reflows the cobalt layer, the cobalt layer completely filling the set of features to form a set of metal conductor structures.
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Abstract
An advanced metal conductor structure and a method for constructing the structure are described. A pattern is provided in a dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is created over the patterned dielectric. A ruthenium layer disposed over the adhesion promoting layer is deposited. A nitridation process is performed on the ruthenium layer to produce a nitridized ruthenium layer. Using a physical vapor deposition process, a cobalt layer is deposited disposed over the nitridized ruthenium layer. A thermal anneal is performed which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures. In another aspect of the invention, an integrated circuit device is formed using the method.
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Citations
14 Claims
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1. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures; creating an adhesion promoting layer disposed on the patterned dielectric; depositing a ruthenium metal layer disposed on the adhesion promoting layer; performing a nitridation process on the ruthenium metal layer to produce a nitridized ruthenium metal layer; using a physical vapor deposition process to deposit a cobalt layer sufficient to completely fill a remainder portion of the set of features disposed on the nitridized ruthenium metal layer; and performing a thermal anneal which reflows the cobalt layer, the cobalt layer completely filling the set of features to form a set of metal conductor structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification