Semiconductor device

• US 9,941,309 B2
• Filed: 07/29/2016
• Issued: 04/10/2018
• Est. Priority Date: 08/03/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Shishido, Hideaki, Koyama, Jun, Matsubayashi, Daisuke, Murayama, Keisuke
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Yasmeen, Nishath
• Application Number:
  US15/223,079
• Publication Number:
  US 20160336355A1
• Time in Patent Office: 620 Days
• Field of Search: None
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/121 common or background
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating film over the substrate;

a second insulating film in direct contact with the first insulating film;

a third insulating film in direct contact with the second insulating film;

a gate electrode over the substrate;

a semiconductor film over the substrate, overlapping with the gate electrode, including a channel formation region, sandwiched between the first insulating film and the second insulating film, and in direct contact with one of the first insulating film and the second insulating film;

a first conductive film and a second conductive film in electrical contact with the semiconductor film;

a pixel electrode in electrical contact with the first conductive film in an opening formed in the second insulating film and the third insulating film;

a transistor comprising;

the gate electrode;

the semiconductor film; and

the first insulating film between the gate electrode and the semiconductor film; and

a capacitor comprising;

a first capacitor electrode;

the pixel electrode as a second capacitor electrode; and

the third insulating film as a capacitor dielectric film between the first capacitor electrode and the pixel electrode,

wherein the first capacitor electrode and the semiconductor film are formed from a same film, and

wherein the first capacitor electrode is in direct contact with the third insulating film and with the one of the first insulating film and the second insulating film.

2. The semiconductor device according to claim 1,

wherein the second insulating film is in direct contact with a periphery of the first capacitor electrode.

3. The semiconductor device according to claim 1,

wherein the first capacitor electrode further contains a dopant at a concentration greater than 1×

10¹⁹ atoms/cm³ and less than or equal to 1×

10²² atoms/cm³.

4. The semiconductor device according to claim 1,

wherein the first capacitor electrode contains a dopant so as to have a higher electrical conductivity than the semiconductor film.

5. The semiconductor device according to claim 1, further comprising an organic insulating film interposed between the third insulating film and the pixel electrode,

wherein the pixel electrode is in direct contact with the third insulating film through an opening in the organic insulating film.

6. The semiconductor device according to claim 1, further comprising a capacitor line formed from a same film as the gate electrode,

wherein the first capacitor electrode is connected to the capacitor line through a film formed from a same film as a source electrode or a drain electrode of the transistor.

7. The semiconductor device according to claim 1, wherein the pixel electrode is in direct contact with the third insulating film in a region overlapping with the first capacitor electrode and the second capacitor electrode.

8. The semiconductor device according to claim 1, further comprising a flexible printed circuit attached to the substrate and connected to the pixel electrode, the semiconductor device being a display device.

9. A semiconductor device comprising:

a substrate;

a first insulating film over the substrate, the first insulating film being a first oxide film;

a second insulating film on and in direct contact with the first insulating film, the second insulating film being a second oxide film;

a third insulating film on and in direct contact with the second insulating film, the third insulating film being a nitride film;

a gate electrode over the substrate;

an oxide semiconductor film over the substrate, overlapping with the gate electrode, including a channel formation region, sandwiched between the first insulating film and the second insulating film, and in direct contact with the first insulating film;

a source electrode and a drain electrode in electrical contact with the oxide semiconductor film;

a light-transmitting pixel electrode in electrical contact one of the source electrode and the drain electrode in an opening formed in the second insulating film and the third insulating film;

a transistor comprising;

the gate electrode;

the oxide semiconductor film; and

the first insulating film between the gate electrode and the oxide semiconductor film; and

a capacitor comprising;

a first capacitor electrode;

the light-transmitting pixel electrode as a second capacitor electrode; and

the third insulating film as a capacitor dielectric film between the first capacitor electrode and the light-transmitting pixel electrode,

wherein the first capacitor electrode and the oxide semiconductor film are formed from a same film, and

wherein the first capacitor electrode is in direct contact with the first insulating film and with the third insulating film.

10. The semiconductor device according to claim 9,

wherein the first capacitor electrode further contains a dopant at a concentration greater than 1×

10¹⁹ atoms/cm³ and less than or equal to 1×

10²² atoms/cm³.

11. The semiconductor device according to claim 9,

wherein the first capacitor electrode contains a dopant so as to have a higher electrical conductivity than the oxide semiconductor film.

12. The semiconductor device according to claim 9, further comprising an organic insulating film interposed between the third insulating film and the light-transmitting pixel electrode,

wherein the light-transmitting pixel electrode is in direct contact with the third insulating film through an opening in the organic insulating film.

13. The semiconductor device according to claim 9, further comprising a capacitor line formed from a same film as the gate electrode,

wherein the first capacitor electrode is connected to the capacitor line through a film formed from a same film as the source electrode or the drain electrode of the transistor.

14. The semiconductor device according to claim 9, wherein the light-transmitting pixel electrode is in direct contact with the third insulating film in a region overlapping with the first capacitor electrode and the second capacitor electrode.

15. The semiconductor device according to claim 9, further comprising a flexible printed circuit attached to the substrate and connected to the light-transmitting pixel electrode, the semiconductor device being a display device.

16. A semiconductor device comprising:

a substrate;

a first insulating film over the substrate, the first insulating film being a first oxide film;

a second insulating film on and in direct contact with the first insulating film, the second insulating film being a second oxide film;

a third insulating film on and in direct contact with the second insulating film, the third insulating film being a nitride film;

a gate electrode over the substrate;

an oxide semiconductor film over the substrate, overlapping with the gate electrode, including a channel formation region, sandwiched between the first insulating film and the second insulating film, and in direct contact with the first insulating film;

a source electrode and a drain electrode in electrical contact with the oxide semiconductor film;

a light-transmitting pixel electrode in electrical contact one of the source electrode and the drain electrode in an opening formed in the second insulating film and the third insulating film;

a transistor comprising;

the gate electrode;

the oxide semiconductor film; and

the first insulating film between the gate electrode and the oxide semiconductor film; and

a capacitor comprising;

a first capacitor electrode;

the light-transmitting pixel electrode as a second capacitor electrode; and

the third insulating film as a capacitor dielectric film between the first capacitor electrode and the light-transmitting pixel electrode,

wherein the first capacitor electrode and the oxide semiconductor film are formed from a same film,

wherein the first capacitor electrode is in direct contact with the first insulating film and with the third insulating film, and

wherein the second insulating film is in direct contact with a periphery of the first capacitor electrode.

17. The semiconductor device according to claim 16,

wherein the first capacitor electrode further contains a dopant at a concentration greater than 1×

10¹⁹ atoms/cm³ and less than or equal to 1×

10²² atoms/cm³.

18. The semiconductor device according to claim 16,

wherein the first capacitor electrode contains a dopant so as to have a higher electrical conductivity than the oxide semiconductor film.

19. The semiconductor device according to claim 16, further comprising an organic insulating film interposed between the third insulating film and the light-transmitting pixel electrode,

wherein the light-transmitting pixel electrode is in direct contact with the third insulating film through an opening in the organic insulating film.

20. The semiconductor device according to claim 16, further comprising a capacitor line formed from a same film as the gate electrode,

wherein the first capacitor electrode is connected to the capacitor line through a film formed from a same film as the source electrode or the drain electrode of the transistor.

21. The semiconductor device according to claim 16, wherein the light-transmitting pixel electrode is in direct contact with the third insulating film in a region overlapping with the first capacitor electrode and the second capacitor electrode.

22. The semiconductor device according to claim 16, further comprising a flexible printed circuit attached to the substrate and connected to the light-transmitting pixel electrode, the semiconductor device being a display device.