Driver circuit with oxide semiconductor layers having varying hydrogen concentrations

• US 9,941,310 B2
• Filed: 10/05/2016
• Issued: 04/10/2018
• Est. Priority Date: 12/24/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Sakata, Junichiro, Maruyama, Tetsunori, Imoto, Yuki, Asano, Yuji, Koezuka, Junichi
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): KHAN, FARID H
• Application Number:
  US15/285,661
• Publication Number:
  US 20170025448A1
• Time in Patent Office: 552 Days
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH₄) and ammonia (NH₃) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Claims

1. A semiconductor device comprising:

a transistor comprising a first oxide semiconductor layer comprising a channel formation region, a source electrode, and a drain electrode; and

a passive element comprising a second oxide semiconductor layer electrically connected to one of the source electrode and the drain electrode,

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

2. The semiconductor device according to claim 1, wherein the passive element is a resistor element.

3. The semiconductor device according to claim 1, further comprising a nitride insulating layer containing hydrogen over the second oxide semiconductor layer.

4. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer is spaced from the second oxide semiconductor layer.

5. The semiconductor device according to claim 1, further comprising a light-emitting element.

6. The semiconductor device according to claim 1, further comprising a liquid crystal element.

7. The semiconductor device according to claim 1, wherein the transistor further comprises a gate electrode adjacent to the first oxide semiconductor layer.

8. The semiconductor device according to claim 3, wherein the nitride insulating layer is a silicon nitride layer.

9. A semiconductor device comprising:

a transistor comprising a first oxide semiconductor layer comprising a channel formation region, a source electrode, and a drain electrode; and

a passive element comprising a second oxide semiconductor layer electrically connected to one of the source electrode and the drain electrode,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are on a same surface, and

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

10. The semiconductor device according to claim 9, wherein the passive element is a resistor element.

11. The semiconductor device according to claim 9, further comprising a nitride insulating layer containing hydrogen over the second oxide semiconductor layer.

12. The semiconductor device according to claim 9, wherein the first oxide semiconductor layer is spaced from the second oxide semiconductor layer.

13. The semiconductor device according to claim 9, further comprising a light-emitting element.

14. The semiconductor device according to claim 9, further comprising a liquid crystal element.

15. The semiconductor device according to claim 9, wherein the transistor further comprises a gate electrode adjacent to the first oxide semiconductor layer.

16. A semiconductor device comprising:

a transistor comprising a first oxide semiconductor layer comprising a channel formation region;

a passive element comprising a second oxide semiconductor layer; and

a conductive layer,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are on a same surface,

wherein the first oxide semiconductor layer is electrically connected to the second oxide semiconductor layer through the conductive layer, and

wherein the conductive layer is over the second oxide semiconductor layer, and

wherein resistance of the second oxide semiconductor layer is lower than resistance of the first oxide semiconductor layer.

17. The semiconductor device according to claim 16, wherein the passive element is a resistor element.

18. The semiconductor device according to claim 16, further comprising a nitride insulating layer containing hydrogen over the second oxide semiconductor layer.

19. The semiconductor device according to claim 16, wherein the first oxide semiconductor layer is spaced from the second oxide semiconductor layer.

20. The semiconductor device according to claim 16, further comprising a light-emitting element.

21. The semiconductor device according to claim 16, further comprising a liquid crystal element.

22. The semiconductor device according to claim 16, wherein the transistor further comprises a gate electrode adjacent to the first oxide semiconductor layer.

23. A semiconductor device comprising:

a transistor comprising a first oxide semiconductor layer comprising a channel formation region, a source electrode, and a drain electrode; and

a passive element comprising a second oxide semiconductor layer electrically connected to one of the source electrode and the drain electrode,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer comprise indium and zinc,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are on a same surface, and

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

24. The semiconductor device according to claim 23, wherein the passive element is a resistor element.

25. The semiconductor device according to claim 23, further comprising a nitride insulating layer containing hydrogen over the second oxide semiconductor layer.

26. The semiconductor device according to claim 23, wherein the first oxide semiconductor layer is spaced from the second oxide semiconductor layer.

27. The semiconductor device according to claim 23, further comprising a light-emitting element.

28. The semiconductor device according to claim 23, further comprising a liquid crystal element.

29. The semiconductor device according to claim 23, wherein the transistor further comprises a gate electrode adjacent to the first oxide semiconductor layer.