Semiconductor device and method for manufacturing the same

• US 9,941,393 B2
• Filed: 06/18/2014
• Issued: 04/10/2018
• Est. Priority Date: 03/05/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Lee, Eugene
• Application Number:
  US14/307,675
• Publication Number:
  US 20140291676A1
• Time in Patent Office: 1,392 Days
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

Claims

1. A semiconductor device comprising:

a substrate having an insulating surface;

a first electrode and a second electrode over the insulating surface, each of the first electrode and the second electrode comprising a first conductive layer and a second conductive layer;

a first semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode;

a first wiring electrically connected to the first electrode;

a second semiconductor layer that has a light-transmitting property and over the first wiring;

an insulating layer over the first semiconductor layer;

a third electrode over the insulating layer, the third electrode having a light-transmitting property; and

a second wiring electrically connected to the third electrode,

wherein the second semiconductor layer overlaps with the first wiring where the second wiring intersects with the first wiring,

wherein the first wiring and the second wiring overlap with each other,

wherein the third electrode overlaps with the first semiconductor layer, and

wherein each of the first wiring and the second wiring has a light-shielding property.

2. The semiconductor device according to claim 1, wherein the first conductive layer has a light-transmitting property.

3. The semiconductor device according to claim 1, wherein the insulating layer is a gate insulating layer between the first semiconductor layer and the third electrode.

4. The semiconductor device according to claim 1, wherein a lower surface of the first semiconductor layer is in contact with the first electrode and the second electrode.

5. The semiconductor device according to claim 1, wherein the third electrode is a gate electrode.

6. The semiconductor device according to claim 1,

wherein each of the first semiconductor layer and the second semiconductor layer comprises an oxide semiconductor containing indium, gallium, and zinc.