Semiconductor devices, a fluid sensor and a method for forming a semiconductor device
First Claim
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1. A semiconductor device comprising:
- a plurality of quantum structures comprising predominantly germanium,wherein the plurality of quantum structures are formed on a first semiconductor layer structure,wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8 ×
1011 quantum structures per cm2,wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.
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Abstract
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
7 Citations
14 Claims
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1. A semiconductor device comprising:
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a plurality of quantum structures comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8 ×
1011 quantum structures per cm2,wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m. - View Dependent Claims (2, 3)
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4. A semiconductor device, comprising:
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a plurality of quantum structures formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm, wherein the plurality of quantum structures comprise germanium and antimony, and wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 5 μ
m and 7 μ
m or to absorb light with a light absorption maximum at a wavelength of between 5 μ
m and 7 μ
m. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A fluid sensor, comprising:
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a detector comprising a processing module 790 configured to generate a detection signal based on light emitted by an emitter and propagated through a fluid, wherein the detector or the emitter comprises a plurality of quantum structures comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 1×
1010 quantum structures per cm2,wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.
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Specification