Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions

• US 9,941,466 B2
• Filed: 11/08/2016
• Issued: 04/10/2018
• Est. Priority Date: 04/10/2015
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S.
• Primary Examiner(s): Ha, Nathan W
• Application Number:
  US15/345,636
• Publication Number:
  US 20170077393A1
• Time in Patent Office: 518 Days
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises MgO and the magnetic electrode material comprises Co and Fe. B is proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material. B-absorbing material is formed over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material. B is absorbed from proximate the opposing facing surfaces laterally into the B-absorbing material. Other embodiments are disclosed, including magnetic tunnel junctions independent of method of manufacture.

Claims

1. A magnetic tunnel junction, comprising:

a conductive first magnetic electrode comprising magnetic recording material;

a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;

a non-magnetic tunnel insulator material between the first and second electrodes;

at least one of the magnetic recording material and the magnetic reference material comprising Co and Fe;

the tunnel insulator material comprising MgO;

the first magnetic electrode, the second magnetic electrode, and the tunnel insulator material comprising a stack having opposing sidewalls; and

insulative material laterally proximate the opposing stack sidewalls, the insulative material comprising each of B, Al, and N.

2. The magnetic tunnel junction of claim 1 wherein the insulative material comprises Si.

3. The magnetic tunnel junction of claim 1 wherein B is present in the insulative material at a concentration of at least about 10 atomic percent.

4. The magnetic tunnel junction of claim 1 wherein B is present in the insulative material at a concentration of at least about 20 atomic percent.

5. The magnetic tunnel junction of claim 1 wherein the each of the B, Al, and N is directly against the opposing stack sidewalls of the conductive first magnetic electrode, the conductive second magnetic electrode, and the non-magnetic tunnel insulator material.

6. A magnetic tunnel junction, comprising:

a conductive first magnetic electrode comprising magnetic recording material;

a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;

a non-magnetic tunnel insulator material between the first and second electrodes;

at least one of the magnetic recording material and the magnetic reference material comprising Co and Fe;

the tunnel insulator material comprising MgO;

the first magnetic electrode, the second magnetic electrode, and the tunnel insulator material comprising a stack having opposing sidewalls; and

insulative material laterally proximate the opposing stack sidewalls, the insulative material comprising each of B, Si, and N.

7. The magnetic tunnel junction of claim 6 wherein the each of the B, Si, and N is directly against the opposing stack sidewalls of the conductive first magnetic electrode, the conductive second magnetic electrode, and the non-magnetic tunnel insulator material.

8. A magnetic tunnel junction, comprising:

a conductive first magnetic electrode comprising magnetic recording material;

a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;

a non-magnetic tunnel insulator material between the first and second electrodes;

at least one of the magnetic recording material and the magnetic reference material comprising Co and Fe;

the tunnel insulator material comprising MgO;

the first magnetic electrode, the second magnetic electrode, and the tunnel insulator material comprising a stack having opposing sidewalls; and

insulative material laterally proximate the opposing stack sidewalls, the insulative material comprising each of B, Si, and O.

9. The magnetic tunnel junction of claim 8 wherein the each of the B, Si, and O is directly against the opposing stack sidewalls of the conductive first magnetic electrode, the conductive second magnetic electrode, and the non-magnetic tunnel insulator material.

10. A magnetic tunnel junction, comprising:

a conductive first magnetic electrode comprising magnetic recording material;

a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;

a non-magnetic tunnel insulator material between the first and second electrodes;

at least one of the magnetic recording material and the magnetic reference material comprising Co and Fe;

the tunnel insulator material comprising MgO;

the first magnetic electrode, the second magnetic electrode, and the tunnel insulator material comprising a stack having opposing sidewalls; and

insulative material laterally proximate the opposing stack sidewalls, the insulative material comprising each of B, SiO₂, and Al₂O₃.

11. The magnetic tunnel junction of claim 10 wherein the each of the B, SiO₂, and Al₂O₃ is directly against the opposing stack sidewalls of the conductive first magnetic electrode, the conductive second magnetic electrode, and the non-magnetic tunnel insulator material.

12. A magnetic tunnel junction, comprising:

a conductive first magnetic electrode comprising magnetic recording material;

a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;

a non-magnetic tunnel insulator material between the first and second electrodes;

at least one of the magnetic recording material and the magnetic reference material comprising Co and Fe;

the tunnel insulator material comprising MgO;

the first magnetic electrode, the second magnetic electrode, and the tunnel insulator material comprising a stack having opposing sidewalls; and

insulative material directly against the opposing stack sidewalls, the insulative material comprising a combination of insulator material and semiconductive material, the insulative material having sufficient insulator material to render the insulative material insulative as opposed to semiconductive.

13. The magnetic tunnel junction of claim 12 wherein the insulator material comprises Si₃N₄.

14. The magnetic tunnel junction of claim 12 wherein the semiconductive material comprises AlN.

15. The magnetic tunnel junction of claim 14 wherein the insulator material comprises Si₃N₄.