Hybrid vertical cavity light emitting sources
First Claim
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1. A vertical cavity light emitting source comprising:
- (a) a lower reflector comprising a first patterned membrane comprising an array of holes patterned into a layer of semiconductor;
(b) an active region disposed over the lower reflector, wherein the active region is separated from the lower reflector by at least one intra-cavity electrically conductive metal contact disposed between an outermost surface of the active region and the lower reflector, and further wherein the active region comprises a light-emitting region, a first cladding layer, a second cladding layer, a first contact layer comprising a doped semiconductor and a second contact layer comprising a doped semiconductor, wherein the light-emitting region is between the first and second cladding layers and the first and second cladding layers are between the first and second contact layers; and
(c) an upper reflector comprising a second patterned membrane comprising an array of holes patterned into a layer of semiconductor disposed over the active region, wherein the upper reflector is separated from the active region by at least one intra-cavity electrically conductive metal contact disposed between the upper reflector and an outermost surface of the active region.
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Abstract
Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source.
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Citations
18 Claims
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1. A vertical cavity light emitting source comprising:
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(a) a lower reflector comprising a first patterned membrane comprising an array of holes patterned into a layer of semiconductor; (b) an active region disposed over the lower reflector, wherein the active region is separated from the lower reflector by at least one intra-cavity electrically conductive metal contact disposed between an outermost surface of the active region and the lower reflector, and further wherein the active region comprises a light-emitting region, a first cladding layer, a second cladding layer, a first contact layer comprising a doped semiconductor and a second contact layer comprising a doped semiconductor, wherein the light-emitting region is between the first and second cladding layers and the first and second cladding layers are between the first and second contact layers; and (c) an upper reflector comprising a second patterned membrane comprising an array of holes patterned into a layer of semiconductor disposed over the active region, wherein the upper reflector is separated from the active region by at least one intra-cavity electrically conductive metal contact disposed between the upper reflector and an outermost surface of the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification