Optical device structure using GaN substrates and growth structures for laser applications
First Claim
Patent Images
1. A device comprising:
- a {30-31} crystalline surface region comprising gallium and nitrogen;
a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region, the first facet comprising a first semipolar surface; and
a second facet provided on the second end of the laser stripe region, the second facet comprising a second semipolar surface,wherein the first facet is substantially parallel with the second facet;
the {30-31} crystalline surface region is selected from either (30-31) or (30-3-1); and
the {30-31} crystalline surface region is off-cut less than +/−
8 degrees toward or away from an a-plane.
1 Assignment
0 Petitions
Accused Products
Abstract
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
284 Citations
18 Claims
-
1. A device comprising:
-
a {30-31} crystalline surface region comprising gallium and nitrogen; a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet comprising a first semipolar surface; and a second facet provided on the second end of the laser stripe region, the second facet comprising a second semipolar surface, wherein the first facet is substantially parallel with the second facet;
the {30-31} crystalline surface region is selected from either (30-31) or (30-3-1); and
the {30-31} crystalline surface region is off-cut less than +/−
8 degrees toward or away from an a-plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 13, 14)
-
-
11. A device comprising:
-
a {30-31} crystalline surface region comprising gallium and nitrogen, the {30-31} crystalline surface region being selected from either (30-31) or (30-3-1); an active region overlying a portion of the {30-31} crystalline surface region; a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and a second facet provided on the second end of the laser stripe, the second facet being substantially orthogonal to the laser stripe region, wherein the {30-31} crystalline surface region is off-cut less than +/−
3 degrees toward or away from a c-plane.
-
-
15. A method for manufacturing a laser device, the method comprising:
-
providing a {30-31} crystalline surface region comprising gallium and nitrogen, wherein the {30-31} crystalline surface region is off-cut less than +/−
3 degrees toward or away from a c-plane;forming an active region overlying a portion of the {30-31} crystalline surface region; forming a laser stripe region overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end, the first end having a first semipolar surface facet and the second end having a second semipolar surface facet; and forming one or more cladding layers that comprise less than about 2% mole fraction of AlN. - View Dependent Claims (16, 17, 18)
-
Specification