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Optical device structure using GaN substrates and growth structures for laser applications

  • US 9,941,665 B1
  • Filed: 08/08/2017
  • Issued: 04/10/2018
  • Est. Priority Date: 04/13/2009
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a {30-31} crystalline surface region comprising gallium and nitrogen;

    a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

    a first facet provided on the first end of the laser stripe region, the first facet comprising a first semipolar surface; and

    a second facet provided on the second end of the laser stripe region, the second facet comprising a second semipolar surface,wherein the first facet is substantially parallel with the second facet;

    the {30-31} crystalline surface region is selected from either (30-31) or (30-3-1); and

    the {30-31} crystalline surface region is off-cut less than +/−

    8 degrees toward or away from an a-plane.

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