High frequency multi-level inverter
First Claim
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1. A method comprising:
- generating a periodic waveform having a first frequency by switching, at different times and at a second frequency, each of a plurality of transistors connected in series in a first bank of a multi-level inverter, wherein the second frequency is greater than the first frequency.
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Abstract
A multi-level inverter having at least two banks, each bank containing a plurality of low voltage MOSFET transistors. A processor configured to switch the plurality of low voltage MOSFET transistors in each bank to switch at multiple times during each cycle.
1099 Citations
20 Claims
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1. A method comprising:
generating a periodic waveform having a first frequency by switching, at different times and at a second frequency, each of a plurality of transistors connected in series in a first bank of a multi-level inverter, wherein the second frequency is greater than the first frequency. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An apparatus comprising:
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a multi-level inverter comprising; at least two banks, wherein a first bank and a second bank are connected in series between an input voltage and a reference voltage and each of the first bank and the second bank comprises a plurality of transistors connected in series; and a plurality of capacitors, each of the capacitors connected between two adjacent transistors of the first bank and two adjacent transistors of the second bank; and a controller configured to cause the multi-level inverter to generate a periodic waveform having a first frequency by; controlling each transistor of the plurality of transistors of the first bank to switch at different times and at a second frequency, and controlling each transistor of the plurality of transistors of the second bank to switch at different times and at the second frequency, wherein the second frequency is greater than the first frequency. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A multi-level inverter, comprising:
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a first bank of a plurality of MOSFET transistors connected in series; a second bank of a plurality of MOSFET transistors connected in series, wherein the first bank is connected in series to the second bank and the first bank and the second banks each comprise a first number of transistors, and wherein the first bank and the second bank are connected in series between an input voltage and a reference voltage; a third bank of a plurality of MOSFET transistors connected in series between an inductor and the reference voltage; and a fourth bank of a plurality of MOSFET transistors connected in series between the inductor and the reference voltage and in parallel to the third bank, wherein the inductor is further connected to a node between the first bank and the second bank; and a plurality of capacitors, wherein each capacitor is connected between two adjacent transistors of the first bank and two adjacent transistors of the second bank. - View Dependent Claims (18, 19, 20)
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Specification