Method of providing a variable stiffness chassis for ultrathin device

• US 9,943,019 B2
• Filed: 07/10/2015
• Issued: 04/10/2018
• Est. Priority Date: 01/04/2013
• Status: Active Grant

• Current Assignee: Dell Products LP (Dell Technologies Inc.)
• Original Assignee: Dell Products LP (Dell Technologies Inc.)
• Inventors: Aurongzeb, Deeder M.
• Primary Examiner(s): TRINH, MINH N
• Application Number:
  US14/796,828
• Publication Number:
  US 20150319891A1
• Time in Patent Office: 1,005 Days
• CPC Class Codes: G06F 1/1626 with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]
• CPC Class Codes: H05K 13/00 Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part

Abstract

A method for providing a chassis is described. A chassis base that includes at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium is provided. The chassis base is doped at an edge section, which extends around the circumference and that is located adjacent a center portion of the chassis base, with at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium, such that the center portion is not doped with the at least one second metal element. The chassis base is heat treated such that the center portion includes at least ninety-five weight percent of the first metal element and the edge portion of the chassis base includes at least five weight percent of the at least one second metal element.

Claims

1. A method, comprising:

providing an Information Handling System (IHS) chassis base that includes at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium;

selectively doping the IHS chassis base at an edge section, which extends around the circumference of the IHS chassis base and that is located adjacent a center portion of the IHS chassis base, with at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium, such that the center portion is not doped with the at least one second metal element; and

heat treating the IHS chassis base such that the center portion of the IHS chassis base includes the at least ninety-five weight percent of the first metal element and the edge section of the IHS chassis base includes the at least five weight percent of the at least one second metal element.

2. The method of claim 1, wherein the selectively doping includes selectively doping the IHS chassis base at the edge section with one second metal element selected from the group consisting of at most twenty weight percent of Lithium, at most twenty weight percent of Lithium and at most five percent weight percent of Lanthanum or Ytterbium, and at most twenty percent Lithium and at most five weight percent Hafnium.

3. The method of claim 1, wherein the center portion and the edge section of the IHS chassis base are provided as a first layer of the IHS chassis base, the first metal element is Magnesium, and the method further comprises:

coupling a second layer that includes at least ninety-five weight percent of Aluminum to the first layer.

4. The method of claim 3, further comprising:

providing an interlayer between the first layer and the second layer.

5. The method of claim 3, wherein the first layer and the second layer are bonded using a diffusion bonding process, and the selectively doping includes selectively doping the IHS chassis base at the edge section with at least one second metal element selected from the group consisting of at most twenty weight percent of lithium, at most twenty weight percent of Lithium and at most five percent weight percent of Lanthanum or Ytterbium, and at most twenty weight percent lithium and at most five weight percent Hafnium.

6. The method of claim 3, wherein the first layer and the second layer are bonded using a solid state reaction and the selectively doping includes selectively doping the IHS chassis base at the edge section with at most twenty weight percent Lithium and at most five weight percent Hafnium.

7. The method of claim 3, further comprising:

coupling a second layer that includes a metal foam material to the first layer.