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Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same

  • US 9,944,514 B2
  • Filed: 06/19/2017
  • Issued: 04/17/2018
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. An ultrasonic transducer apparatus, comprising:

  • a bonded structure having;

    a substrate having a metal oxide semiconductor (MOS) integrated circuit and an electrode;

    a conductive membrane bonded to the substrate such that a sealed cavity exists between an uppermost portion of the substrate and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and

    the uppermost portion of the substrate providing an electrical connection between the MOS integrated circuit and the first side of the conductive membrane.

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