Reduction of hotspots of dense features

• US 9,946,166 B2
• Filed: 04/08/2015
• Issued: 04/17/2018
• Est. Priority Date: 05/02/2014
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Tseng, Shih-En
• Primary Examiner(s): Iacoletti, Michelle M
• Application Number:
  US15/308,336
• Publication Number:
  US 20170052455A1
• Time in Patent Office: 1,105 Days
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70133 Measurement of illumination distribution, in pupil plane or field plane
• CPC Class Codes: G03F 7/70258 Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A method to adjust line-width roughness (LWR) in a lithographic apparatus, the method including receiving a value of LWR and/or image log slope (ILS) for each feature of a plurality of different features of a pattern to be imaged, using a patterning device, onto a substrate in a lithographic process, and evaluating a cost function including a lithographic parameter and the values of LWR and/or ILS to determine a value of the lithographic parameter that (i) reduces a bias between the LWR and/or ILS of the different features, or (ii) reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses, or (iii) reduces a difference in the LWR and/or ILS of the different features between different patterning devices, or (iv) any combination selected from (i)-(iii).

Claims

1. A method to adjust line-width roughness (LWR) in a lithographic apparatus, the method comprising:

receiving a value of LWR and/or image log slope (ILS) for each feature of a plurality of different features of a pattern to be imaged, using a patterning device, onto a substrate in a lithographic process; and

evaluating, by a hardware computer, a cost function comprising a lithographic parameter and the values of LWR and/or ILS to determine a value of the lithographic parameter that (i) reduces a bias between the LWR and/or ILS of the different features, or (ii) reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses, or (iii) reduces a difference in the LWR and/or ILS of the different features between different patterning devices, or (iv) any combination selected from (i)-(iii); and

providing electronic data, based on the determined lithographic parameter, for control of an operational parameter of the lithographic apparatus or process.

2. The method of claim 1, wherein the evaluating reduces a bias between the LWR and/or ILS of the different features.

3. The method of claim 1, wherein the cost function further comprises critical dimension (CD) of the different features and the evaluating reduces a difference of the critical dimension (CD) to a target.

4. The method of claim 1, wherein the lithographic parameter comprises an illumination mode of a radiation beam applied to the patterning device, or wherein the lithographic parameter comprises a spatial intensity distribution characteristic of the illumination mode.

5. The method of claim 1, wherein the lithographic parameter comprises a wavefront characteristic.

6. The method of claim 1, wherein the evaluated lithographic parameter comprises astigmatism, or wherein the evaluated lithographic parameter comprises focus.

7. The method of claim 1, comprising evaluating the cost function through depth of focus of the lithographic process.

8. The method of claim 1, wherein the evaluating reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses.

9. The method of claim 1, wherein the evaluating reduces a difference in the LWR and/or ILS of the different features between different patterning devices.

10. A method to adjust line-width roughness (LWR) in a lithographic system, the method comprising:

receiving an image log slope (ILS) value for each of a plurality of different features in a pattern formed by an illumination radiation beam; and

tuning, by a hardware computer, a lithographic system parameter to optimize a bias between the image log slope (ILS) values of the different features to reduce line-width roughness (LWR).

11. The method of claim 10, wherein the lithographic system parameter comprises an illumination mode of the illumination radiation beam applied to the patterning device, or wherein the lithographic system parameter comprises a spatial intensity distribution characteristic of the illumination mode.

12. The method of claim 11, wherein tuning the lithographic system parameter comprises adjusting a plurality of individually controllable elements in a path of the illumination radiation beam in an illumination system of the lithographic system.

13. The method of claim 10, wherein the lithographic system parameter comprises a wavefront characteristic.

14. The method of claim 13, wherein tuning the lithographic system parameter comprises compensating for an optical aberration in an optical system of the lithographic system, or wherein tuning the lithographic system parameter comprises locally heating an optical element in the projection system.

15. The method of claim 10, wherein the lithographic system parameter comprises focus, and wherein tuning the lithographic system parameter comprises adjusting a focus position at which the pattern is imaged on a substrate.

16. The method of claim 10, further comprising determining the ILS for the plurality of different features at each of a plurality of evaluation points selected in an image plane.

17. A non-transitory data storage medium having a computer program stored therein, the computer program configured to cause a processor to:

receive a value of line-width roughness (LWR) and/or image log slope (ILS) for each feature of a plurality of different features of a pattern to be imaged, using a patterning device in a lithographic apparatus, onto a substrate in a lithographic process; and

evaluate a cost function comprising a lithographic parameter and the values of LWR and/or ILS to determine a value of the lithographic parameter that (i) reduces a bias between the LWR and/or ILS of the different features, or (ii) reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses, or (iii) reduces a difference in the LWR and/or ILS of the different features between different patterning devices, or (iv) any combination selected from (i)-(iii); and

providing electronic data, based on the evaluated lithographic parameter, for control of an operational parameter of the lithographic apparatus or process.

18. The data storage medium of claim 17, wherein the computer program is configured to cause a processor to evaluate the cost function to reduce a bias between the LWR and/or ILS of the different features.

19. The data storage medium of claim 17, wherein the cost function further comprises critical dimension (CD) of the different features and the computer program is configured to cause a processor to evaluate the cost function to reduce a difference of the critical dimension (CD) to a target.

20. The data storage medium of claim 17, wherein the lithographic parameter comprises an illumination mode of a radiation beam applied to the patterning device, or wherein the lithographic parameter comprises a spatial intensity distribution characteristic of the illumination mode.