Method and structure for mandrel and spacer patterning
First Claim
1. A method, comprising:
- receiving an integrated circuit (IC) design layout, wherein the IC design layout includes a first layout block and a second layout block, the first layout block includes a first line pattern oriented lengthwise in a first direction, the second layout block includes a second line pattern oriented lengthwise in the first direction, and the first and second layout blocks are separated by a first space, wherein the first and second line patterns are physically separate from each other;
adding a dummy pattern to the first space so that the first and second line patterns become physically connected through the dummy pattern, wherein the dummy pattern is designed to be transferred onto a wafer;
outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format, wherein the mandrel pattern layout includes the first and second line patterns and the dummy pattern, and wherein the cut pattern layout includes a pattern corresponding to the first space;
manufacturing a first mask with the mandrel pattern layout; and
manufacturing a second mask with the cut pattern layout.
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Accused Products
Abstract
A method includes receiving an integrated circuit design layout that includes first and second layout blocks separated by a first space. The first and second layout blocks include, respectively, first and second line patterns oriented lengthwise in a first direction. The method further includes adding a dummy pattern to the first space, which connects the first and second line patterns. The method further includes outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format. The mandrel pattern layout includes the first and second line patterns and the dummy pattern. The cut pattern layout includes a pattern corresponding to the first space. In embodiments, the method further includes manufacturing a first mask with the mandrel pattern layout and manufacturing a second mask with the cut pattern layout. In embodiments, the method further includes patterning a substrate with the first mask and the second mask.
47 Citations
18 Claims
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1. A method, comprising:
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receiving an integrated circuit (IC) design layout, wherein the IC design layout includes a first layout block and a second layout block, the first layout block includes a first line pattern oriented lengthwise in a first direction, the second layout block includes a second line pattern oriented lengthwise in the first direction, and the first and second layout blocks are separated by a first space, wherein the first and second line patterns are physically separate from each other; adding a dummy pattern to the first space so that the first and second line patterns become physically connected through the dummy pattern, wherein the dummy pattern is designed to be transferred onto a wafer; outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format, wherein the mandrel pattern layout includes the first and second line patterns and the dummy pattern, and wherein the cut pattern layout includes a pattern corresponding to the first space; manufacturing a first mask with the mandrel pattern layout; and manufacturing a second mask with the cut pattern layout. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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receiving an integrated circuit (IC) design layout, wherein the IC design layout includes a first layout block and a second layout block, the first layout block includes a first plurality of line patterns that are oriented lengthwise in a first direction and spaced from each other with a first pitch along a second direction that is orthogonal to the first direction, the second layout block includes a second plurality of line patterns that are oriented lengthwise in the first direction and spaced from each other with a second pitch along the second direction, and the first and second layout blocks are separated by a first space, wherein the first plurality of line patterns are physically separate from the second plurality of line patterns; adding a dummy pattern to the first space, wherein the dummy pattern physically connects one of the first plurality and one of the second plurality, wherein the dummy pattern is designed to be transferred onto a wafer; outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format, wherein the mandrel pattern layout includes the first and second pluralities and the dummy pattern, and wherein the cut pattern layout includes a pattern corresponding to the first space; manufacturing a first mask with the mandrel pattern layout; and manufacturing a second mask with the cut pattern layout. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method, comprising:
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receiving an integrated circuit (IC) design layout, wherein the IC design layout includes two layout blocks separated by a space, wherein each layout block includes a line pattern oriented lengthwise in a first direction, and the two line patterns are physically separate from each other; adding a dummy pattern to the space, wherein the dummy pattern physically connects the two line patterns of the two layout blocks, wherein a portion of the dummy pattern is oriented lengthwise in a second direction that intersects the first direction with an angle not more than 45 degrees; outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format, wherein the mandrel pattern layout includes the two line patterns and the dummy pattern, and wherein the cut pattern layout includes a pattern corresponding to the space; manufacturing a first mask with the mandrel pattern layout; and manufacturing a second mask with the cut pattern layout. - View Dependent Claims (18)
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Specification