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Plasma poisoning to enable selective deposition

  • US 9,947,539 B2
  • Filed: 07/24/2017
  • Issued: 04/17/2018
  • Est. Priority Date: 03/18/2016
  • Status: Expired due to Fees
First Claim
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1. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:

  • depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;

    treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

    removing said first photolithographic mask;

    depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;

    treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

    removing said second photolithographic mask; and

    performing an atomic layer deposition process.

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