Plasma poisoning to enable selective deposition
First Claim
Patent Images
1. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:
- depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;
treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
removing said first photolithographic mask;
depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;
treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
removing said second photolithographic mask; and
performing an atomic layer deposition process.
1 Assignment
0 Petitions
Accused Products
Abstract
Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.
-
Citations
14 Claims
-
1. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:
-
depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones; treating said workpiece by exposure to species derived from a fluoro-carbon plasma; removing said first photolithographic mask; depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones; treating said workpiece by exposure to species derived from a fluoro-carbon plasma; removing said second photolithographic mask; and performing an atomic layer deposition process. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:
-
depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones; treating said workpiece by exposure to species derived from a fluoro-carbon plasma; removing said first photolithographic mask; performing a first atomic layer deposition process on said workpiece; depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones; treating said workpiece by exposure to species derived from a fluoro-carbon plasma; removing said second photolithographic mask; and performing a second atomic layer deposition process. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A method of performing atomic layer deposition in selected zones of a workpiece having 3-dimensional structures on a surface thereof comprising vertical walls separated by trenches, comprising:
-
providing a directional plasma source emitting ions along an ion propagation direction toward said workpiece; orienting said ion propagation direction relative to said vertical walls to enable said vertical walls to mask said selected zones from the ions emitted by said directional plasma source; and performing an atomic layer deposition process on said workpiece. - View Dependent Claims (12, 13, 14)
-
Specification