Semiconductor device including electromagnetic absorption and shielding

• US 9,947,606 B2
• Filed: 12/30/2016
• Issued: 04/17/2018
• Est. Priority Date: 04/26/2012
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Information Technology (Shanghai) Co., Ltd. (Western Digital Corporation)
• Inventors: Huang, Dacheng, Bai, Ye, Qian, Kaiyou, Chiu, Chin-Tien
• Primary Examiner(s): Ahmed, Shahed
• Application Number:
  US15/395,027
• Publication Number:
  US 20170110383A1
• Time in Patent Office: 473 Days
• Field of Search: 257422, 257659, 257660, 257787, 257790, 438 25, 438112, 438127, 438731
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48147 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2225/06506 Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06537 Electromagnetic shielding
• CPC Class Codes: H01L 2225/06562 at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA

Abstract

A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Claims

1. A method of shielding a semiconductor device from at least one of EMI and RFI, comprising the steps of:

(a) mounting one or more semiconductor die on a substrate;

(b) encapsulating the one or more semiconductor die on the substrate in molding compound;

(c) applying a first layer of material onto the molding compound, and applying a second layer onto the first layer, one of the first and second layers absorbing at least one of EMI and RFI, and the other of the first and second layers reflecting at least one of EMI and RFI.

2. The method of claim 1, further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the substrate.

3. The method of claim 1, further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI in a solder mask layer provided on the substrate.

4. The method of claim 1, wherein said step (c) comprises applying the first layer of absorbing material for absorbing at least one of EMI and RFI on the molding compound.

5. The method of claim 1, wherein said step (c) of applying the second layer onto the first layer comprises applying an electrically conductive shielding layer on the first layer for shielding the semiconductor device against at least one of EMI and RFI.

6. The method of claim 5, further comprising the step (e) of grounding the electrically conductive shielding layer to the substrate.

7. The method of claim 6, wherein said step (e) comprises the step of grounding the electrically conductive shielding layer to the substrate with a grounding pin mounted on the substrate and extending into contact with the electrically conductive shielding layer.

8. The method of claim 1, the method further comprising the step [d] of performing a second encapsulation step, subsequent to said steps (b) and (c) to apply molding compound around the first and second layers.

9. A method of shielding a semiconductor device from at least one of EMI and RFI, comprising the steps of:

(a) mounting one or more semiconductor die on a substrate;

(b) encapsulating the one or more semiconductor die on the substrate in molding compound;

(c) encapsulating the molding compound in a layer of electrically conducting shielding material that reflects at least one of EMI and RFI; and

(d) grounding the electrically conductive shielding layer to the substrate with a grounding pin mounted on the substrate and extending away from the substrate into contact with the electrically conductive shielding layer.

10. The method of claim 9, further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the substrate.

11. The method of claim 9, further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI in a solder mask layer provided on the substrate.

12. The method of claim 9, further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the molding compound.

13. The method of claim 12, said step of applying the layer of electrically conducting shielding material comprises the step of applying the layer of electrically conducting shielding material onto the layer of absorbing material.

14. The method of claim 12, said step of applying the layer of electrically conducting shielding material comprises the step of applying the layer of electrically conducting shielding material onto the molding compound and applying the layer of absorbing material onto the layer of electrically conducting shielding material.

15. The method of claim 9, further comprising the step (e) of performing a second encapsulation step, subsequent to said steps (b) and (c) to apply molding compound around the layer of absorbing material and the layer of electrically conducting shielding material.